Combinatorial preparation process of Pb(Zr1-xTix)O3 thin films by chemical solution deposition method
Source abstract
Abstract
Based on the image of the combinatorial synthesis, a new preparation process to fabricate Pb(Zr1-xTix)O3 (PZT) thin films with a series change in composition from only two kinds elemental solutions was developed. It is different from the conventional gol-gel method that the PZT thin films with any composition can be obtained easily from two precursor solutions, Lead-Titanium (PT) and Lead-Zirconium (PZ) metal organic chemical solutions, by mixing the two precursor solutions in the certain ratio. Pb(Zr1-xTix)O3 thin films with composition of series changed from x = 0.1 to 0.9 were fabricated from the two precursor solutions by the chemical solution deposition (CSD) method. Comparing with the conventional process, it was so fast and convenient to fabricate the PZT thin films with the any compositions by mixing the two precursor solutions of PT and PZ. The composition dependences of orientation, structure and ferroelectric property for the PZT thin films were investigated. The results showed good agreement with those of bulk and film PZT prepared by conventional method. It is concluded that this mixed solution method is applicable in the combinatorial study and results in reliable and brief process to discover new thin film materials by the CSD method.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Ferroelectric and Negative Capacitance Devices · Multiferroics and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Engineering Research Center of Nano-Geomaterials of Ministry of Education, China University of Geosciences
National Institute for Advanced Industrial Science and Technology
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
References (16)
Show source-provided references
1. 10.1126/science.268.5218.173810.1126/science.268.5218.1738 ↗
2. 10.1063/1.12203010.1063/1.122030 ↗
3. 10.1126/science.270.5234.27310.1126/science.270.5234.273 ↗
4. 10.1063/1.12131610.1063/1.121316 ↗
5. 10.1126/science.279.5357.171210.1126/science.279.5357.1712 ↗
6. 6) R. Gremaud, C. P. Broedersz, D. M. Borsa et al., ADVANCED MATERIALS, 19, Issue: 19, 2813 (2007).10.1002/adma.200602560 ↗
7. HE G · 2002 · 17 · 221710.1557/JMR.2002.0327 ↗
8. 8) G. He, T. Iijama, H. Funakubo, Z. Wang and N. Sanada, "Proceedings of the 2000 12th IEEE International Symposum on Applications of Ferroelectrics," Ed. by S. K. Streiffer, B. J. Gibbons and T. Tsurumi, IEEE Proc. of the 2000, 12, Honolulu, Hawaii, USA (2000) p.413.
9. 9) G. He, T. Iijama and H. Funakubo, "Combinatorial and Composition Spread Techniques in Materials and Device Development II," Ed. by G. E. Jabbour and H. Koinuma, SPIE Proc., 4281, San Jose, USA (2001) p. 27.
10. 10) T. Iijima, G. He and H. Funakubo, Integrated Ferroelectrics, 36, Issue 1-4, 255 (2001).10.1080/10584580108015547 ↗
11. 10.1007/BF0055933710.1007/BF00559337 ↗
12. 12) B. Jaffe, W. R. Cook and H. Jaffe, "Piezoelectric Ceramics," Academic Press, New York (1971) p. 137.
13. 10.1063/1.36423910.1063/1.364239 ↗
14. 10.1063/1.34293610.1063/1.342936 ↗
15. 10.1063/1.34161310.1063/1.341613 ↗
16. 10.1063/1.35172610.1063/1.351726 ↗