Low-temperature processing of solution-derived ferroelectric thin films
Source abstract
Abstract
Low-temperature processing of solution-derived ferroelectric thin films comprises various approaches to decrease the crystallization temperature of the target crystalline phase to the values which would render the films compatible for integration in electronic devices. Beside the solution chemistry, nucleation layers and design of the deposition and heating profile, additional approaches are discussed in the paper. They include activation of amorphous films including UV or photochemical activation, laser activation or microwave heating. Hydrothermal growth of thin films is also discussed.
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Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Acoustic Wave Resonator Technologies · Photorefractive and Nonlinear Optics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Jožef Stefan Institute
Centre of Excellence SPACE.SI
Shizuoka University, Research Institute of Electronics
References (86)
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1. 1) J. F. Scott, Science, 315, 954–959 (2007).10.1126/science.1129564 ↗
2. 2) J. F. Scott and F. D. Morrison, Ferroelectrics, 371, 3–9 (2008).10.1080/00150190802384500 ↗
3. 3) P. Muralt, J. Am. Ceram. Soc., 91, 1385–1396 (2008).10.1111/j.1551-2916.2008.02421.x ↗
4. 4) P. Muralt, R. G. Polcawich and S. Trolier-McKinstry, MRS Bull., 34, 658–664 (2009).10.1557/mrs2009.177 ↗
5. 5) C.-B. Eom and S. Trolier-McKinstry, MRS Bull., 37, 1007–1021 (2012).10.1557/mrs.2012.273 ↗
6. 6) A. S. Mischenko, Q. Zhang, J. F. Scott, R. W. Whatmore and N. D. Mathur, Science, 311, 1270–1271 (2006).10.1126/science.1123811 ↗
7. 7) S. G. Lu, B. Rožic, Q. M. Zhang, Z. Kutnjak, Xinyu Li, E. Furman, L. J. Gorny, M. Lin, B. Malic, M. Kosec, R. Blinc and R. Pirc, Appl. Phys. Lett., 97, 162904(3p) (2010).10.1063/1.3501975 ↗
8. 8) R. Jahns, A. Piorra, E. Lage, C. Kirchhof, D. Meyners, J. L. Gugat, M. Krantz, M. Gerken, R. Knoechel and E. Quandt, J. Am. Ceram. Soc., 96, 1673–1681 (2013).10.1111/jace.12400 ↗
9. 9) K. D. Budd, S. K. Dey and D. A. Payne, Brit. Ceram. Pr., 36, 107–112 (1985).
10. 10) G. L. Brennecka, J. F. Ihlefeld, J.-P. Maria, B. A. Tuttle and P. G. Clem, J. Am. Ceram. Soc., 93, 3935–3954 (2010).10.1111/j.1551-2916.2010.04211.x ↗
11. 11) International Technology Roadmap for Semiconductors (2011) http://www.itrs.net/Links/2011ITRS/Home2011.htm.
12. 12) C. K. Kwok and S. B. Desu, J. Mater. Res., 8, 339–344 (1992).10.1557/JMR.1993.0339 ↗
13. 13) S. Hofmann and R. Waser, J. Eur. Ceram. Soc., 19, 1339–1343 (1999).10.1016/S0955-2219(98)00430-0 ↗
14. 14) J. Ihlefeld, B. Laughlin, A. Hunt-Lowery, W. Borland, A. Kingon and J.-P. Maria, J. Electroceram., 14, 95–102 (2005).10.1007/s10832-005-0866-6 ↗
15. 15) K. Tanaka, H. Hayashi, K. I. Kakimoto, H. Ohsato and T. Iijima, Jpn. J. Appl. Phys., 46, 6964–6970 (2007).10.1143/JJAP.46.6964 ↗
16. 16) A. Kupec, B. Malic, J. Tellier, E. Tchernychova, S. Glinsek and M. Kosec, J. Am. Ceram. Soc., 95, 515–523 (2012).10.1111/j.1551-2916.2011.04892.x ↗
17. 17) K. H. Park, C. Y. Kim, Y. W. Jeong, H. J. Kwon, K. Y. Kim, J. S. Lee and S. T. Kim, J. Mater. Res., 10, 1790–1794 (1995).10.1557/JMR.1995.1790 ↗
18. 18) S. Halder, T. Schneller and R. Waser, Appl. Phys., A Mater. Sci. Process., 87, 705–708 (2007).10.1007/s00339-007-3866-3 ↗
19. 19) C. T. Shelton, P. G. Kotula, G. L. Brennecka, P. G. Lam, K. E. Meyer, J.-P. Maria, B. J. Gibbons and J. F. Ihlefeld, Adv. Funct. Mater., 22, 2295–2302 (2012).10.1002/adfm.201103077 ↗
20. 20) S. Glinsek, B. Malic and M. Kosec, Low-Temperature Processing of Functional-Oxide Thin Films, In ‘Chemical Solution Deposition of Functional Oxide Thin Films’, Ed. by T. Schneller, R. Waser, M. Kosec, and D. A. Payne, Springer (in press).
21. 21) S. Hirano and K. Kato, Adv. Ceram. Mater., 3, 503–506 (1988).10.1111/j.1551-2916.1988.tb00264.x ↗
22. 22) S. Hirano and K. Kato, J. Non-Cryst. Solids, 100, 538–541 (1988).10.1016/0022-3093(88)90079-8 ↗
23. 23) D. J. Eichorst and D. A. Payne, Mat. Res. Soc. Symp. Proc., 180, 669–674 (1990).10.1557/PROC-180-669 ↗
24. 24) H. Suzuki, S. Kaneko, K. Murakami and T. Hayashi, Jpn. J. Appl. Phys., 36, 5803–5807 (1997).10.1143/JJAP.36.5803 ↗
25. 25) Z. Huang, Q. Zhang and R. W. Whatmore, J. Appl. Phys., 85, 7355–7361 (1999).10.1063/1.369362 ↗
26. 26) M. Mandeljc, M. Kosec, B. Malic and Z. Samardzija, Integr. Ferroelectr., 36, 163–172 (2001).10.1080/10584580108015538 ↗
27. 27) F. Remondiere, B. Malic, M. Kosec and J.-P. Mercurio, J. Eur. Ceram. Soc., 27, 4363–4366 (2007).10.1016/j.jeurceramsoc.2007.02.208 ↗
28. 28) C. K. Kwok and S. B. Desu, J. Mater. Res., 8, 339–344 (1992).10.1557/JMR.1993.0339 ↗
29. 29) S. Y. Chen and I. W. Chen, J. Am. Ceram. Soc., 77, 2332–2336 (1994).10.1111/j.1151-2916.1994.tb04602.x ↗
30. 30) P. Muralt, T. Maeder, L. Sagalowicz, S. Hiboux, S. Scalese, D. Naumovic, R. G. Agostino, N. Xanthopoulos, H. J. Mathieu, L. Patthey and E. L. Bullock, J. Appl. Phys., 83, 3835–3841 (1998).10.1063/1.366614 ↗
31. 31) S. Hiboux and P. Muralt, J. Eur. Ceram. Soc., 24, 1593–1596 (2004).10.1016/S0955-2219(03)00404-7 ↗
32. 32) N. Li, W. L. Li, L. D. Wang, D. Xu, Q. G. Chi and W. D. Fei, J. Alloys Compd., 552, 269–273 (2013).10.1016/j.jallcom.2012.10.072 ↗
33. 33) M. L. Calzada, I. Bretos, R. Jiménez, H. Guillon and L. Pardo, Adv. Mater., 16, 1620–1624 (2004).10.1002/adma.200306401 ↗
34. 34) M. L. Calzada, I. Bretos, R. Jiménez, H. Guillon, J. Ricote and L. Pardo, J. Mater. Res., 22, 1824–1833 (2007).10.1557/jmr.2007.0228 ↗
35. 35) K. Shinmou, N. Tohge and T. Minami, Jpn. J. Appl. Phys., 33, L1181–L1184 (1994).10.1143/JJAP.33.L1181 ↗
36. 36) N. Tohge, K. Shinmou and T. Minami, J. Sol-Gel Sci. Technol., 2, 581–585 (1994).10.1007/BF00486313 ↗
37. 37) D. W. Barnum, J. Inorg. Nucl. Chem., 21, 221–237 (1961).10.1016/0022-1902(61)80297-2 ↗
38. 38) N. Tohge and Y. Takama, J. Mater. Sci.: Mater. Electron., 10, 273–277 (1999).
39. 39) N. Tohge, G. Zhao and F. Chiba, Thin Solid Films, 351, 85–90 (1999).10.1016/S0040-6090(99)00082-6 ↗
40. 40) I. Bretos, R. Jimenez, E. Rodriguez-Castellon, J. Garcia-Lopez and M. L. Calzada, Chem. Mater., 20, 5731–5733 (2008).10.1021/cm7025812 ↗
41. 41) N. Martın-Arbella, I. Bretos, R. Jimenez, M. L. Calzada and R. Sirera, J. Am. Ceram. Soc., 94, 396–403 (2011).10.1111/j.1551-2916.2010.04095.x ↗
42. 42) G. Montanari, A. L. Costa, S. Albonetti and C. Galassi, J. Sol-Gel Sci. Technol., 36, 203–211 (2005).10.1007/s10971-005-5290-5 ↗
43. 43) C. De Dobbelaere, M. L. Calzada, R. Jimenez, J. Ricote, I. Bretos, J. Mullens, A. Hardy and M. K. Van Bael, J. Am. Chem. Soc., 133, 12922–12925 (2011).10.1021/ja203553n ↗
44. 44) P. Baeri, S. U. Campisano, G. Foti and E. Rimini, J. Appl. Phys., 50, 788–797 (1979).10.1063/1.326046 ↗
45. 45) S. D. Brotherton, J. R. Ayres, M. J. Edwards, C. A. Fisher, C. Glaister, J. P. Gowers, D. J. McCulloch and M. Trainor, Thin Solid Films, 337, 188–195 (1999).10.1016/S0040-6090(98)01176-6 ↗
46. 46) P. P. Donohue, M. A. Todd and Z. Huang, Integr. Ferroelectr., 51, 39–49 (2003).10.1080/10584580390229770 ↗
47. 47) A. Watanabe, T. Tanase, Y. Kobayashi, M. Konno, S. Yamada and T. Miwa, Jpn. J. Appl. Phys., 42, L843–L845 (2003).10.1143/JJAP.42.L843 ↗
48. 48) X. M. Lu, J. S. Zhu, X. F. Huang, C. Y. Lin and Y. N. Wang, Appl. Phys. Lett., 65, 2015(3p.) (1994).10.1063/1.112805 ↗
49. 49) S. S. N. Bharadwaya, T. Dechakupt and S. Trolier McKinstry, J. Am. Ceram. Soc., 91, 1580–1585 (2008).10.1111/j.1551-2916.2008.02313.x ↗
50. 50) O. Baldus and R. Waser, Appl. Phys., A, 80, 1553–1562 (2005).10.1007/s00339-004-2904-7 ↗
51. 51) T. Miyazaki, T. Imai, N. Wakiya, N. Sakamoto, D. Fu and H. Suzuki, Mater. Sci. Eng., B, 173, 89–93 (2010).10.1016/j.mseb.2009.12.017 ↗
52. 52) T. Nakajima, T. Tsuchiya, M. Ichihara, H. Nagai and T. Kumagai, Chem. Mater., 20, 7344–7351 (2008).10.1021/cm801803g ↗
53. 53) O. Baldus and R. Waser, J. Eur. Ceram. Soc., 24, 3013–3020 (2004).10.1016/j.jeurceramsoc.2003.11.007 ↗
54. 54) O. Baldus and R. Waser, Appl. Phys., A, 80, 1553–1562 (2005).10.1007/s00339-004-2904-7 ↗
55. 55) W. H. Sutton, Am. Ceram. Soc. Bull., 68, 376–386 (1989).
56. 56) R. Roy, D. Agrawal, J. Cheng and S. Gedevanishvili, Nature, 399, 668–670 (1999).10.1038/21390 ↗
57. 57) E. T. Thostenson and T.-W. Chou, Composites: Part A, 30, 1055–1071 (1999).
58. 58) S. Song, X. Fu, H. Tan, M. Tao, L. Chen, L. Wang and C. Lin, phys. stat. sol. (a), 164, 779–784 (1997).10.1002/1521-396X(199712)164:2<779::AID-PSSA779>3.0.CO;2-K ↗
59. 59) Z. J. Wang, H. Kokawa, H. Takizawa, M. Ichiki and R. Maeda, Appl. Phys. Lett., 86, 212903(3p) (2005).10.1063/1.1935748 ↗
60. 60) A. Bhaskar, T. H. Chang, H. Y. Chang and S. Y. Cheng, Thin Solid Films, 515, 2891–2896 (2007).10.1016/j.tsf.2006.08.044 ↗
61. 61) A. Bhaskar, T. H. Chang, H. Y. Chang and S. Y. Cheng, Nanotechnology, 18, 395704(7p) (2007).10.1088/0957-4484/18/39/395704 ↗
62. 62) Z. Wang, Y. Chen, Y. Otsuka, M. Zhu, Z. Cao and H. Kokawa, J. Am. Ceram. Soc., 94, 404–409 (2011).10.1111/j.1551-2916.2010.04094.x ↗
63. 63) G. Cao, “Nanostructures and Nanomaterials”, ICP, London (2004).10.1142/p305 ↗
64. 64) M. Yoshimura and K. Byrappa, J. Mater. Sci., 43, 2085–2103 (2007).10.1007/s10853-007-1853-x ↗
65. 65) F. F. Lange, Science, 273, 903–909 (1996).10.1126/science.273.5277.903 ↗
66. 66) M. Yoshimura, S.-E. Yoo, M. Hayashi and N. Ishizawa, Jpn. J. Appl. Phys., 28, L2007–L2009 (1989).10.1143/JJAP.28.L2007 ↗
67. 67) N. Ishizawa, S.-E. Yoo, M. Hayashi and M. Yoshimura, Mat. Res. Soc. Symp. Proc., 200, 57–62 (1990).10.1557/PROC-200-57 ↗
68. 68) K. Kajiyoshi, N. Ishizawa and M. Yoshimura, J. Am. Ceram. Soc., 74, 369–374 (1991).10.1111/j.1151-2916.1991.tb06889.x ↗
69. 69) M. Lencka and R. Riman, Chem. Mater., 5, 61–70 (1993).10.1021/cm00025a014 ↗
70. 70) A. T. Chien, L. Zhao, M. Colic, J. S. Speck and F. F. Lange, J. Mater. Res., 13, 649–659 (1998).10.1557/JMR.1998.0081 ↗
71. 71) M. M. Lencka, A. Anderko and R. E. Riman, J. Am. Ceram. Soc., 78, 2609–2618 (1995).10.1111/j.1151-2916.1995.tb08030.x ↗
72. 72) A. T. Chien, J. S. Speck and F. F. Lange, J. Mater. Res., 12, 1176–1178 (1997).10.1557/JMR.1997.0163 ↗
73. 73) S. Harada and S. Dunn, J. Electroceram., 20, 65–71 (2008).10.1007/s10832-007-9345-6 ↗
74. 74) K. Shimomura, T. Tsurumi, Y. Ohba and M. Daimon, Jpn. J. Appl. Phys., 30[9B], 2174–2177 (1991).10.1143/JJAP.30.2174 ↗
75. 75) T. Kikuchi, T. Tsurumi, Y. Ohba and M. Daimon, Jpn. J. Appl. Phys., 31, 3090–3093 (1992).10.1143/JJAP.31.3090 ↗
76. 76) T. Morita, T. Kanda, Y. Yamagata, M. K. Kurosawa and T. Higuchi, Jpn. J. Appl. Phys., 36, 2998–2999 (1997).10.1143/JJAP.36.2998 ↗
77. 77) R. Ageba, Y. Kadota, T. Maeda, N. Takiguchi, T. Morita, M. Ishikawa, P. Bornmann and T. Hemsel, J. Korean Phys. Soc., 57, 918–923 (2010).10.3938/jkps.57.918 ↗
78. 78) H. Jun, B. Im, K. H. Lee, I. K. Yang, Y. H. Jeong and J. S. Lee, Nanotechnology, 23, 135602(8p) (2012).10.1088/0957-4484/23/13/135602 ↗
79. 79) W. L. Suchanek, Chem. Mater., 16, 1083–1090 (2003).10.1021/cm034952q ↗
80. 80) G. K. L. Goh, C. G. Levi, J. H. Choi and F. F. Lange, J. Cryst. Growth, 286, 457–464 (2006).10.1016/j.jcrysgro.2005.10.021 ↗
81. 81) A. D. Handoko and G. K. L. Goh, Thin Solid Films, 519, 5156–5160 (2011).10.1016/j.tsf.2011.01.078 ↗
82. 82) M. Ishikawa, K. Yazawa, T. Fujisawa, S. Yasui, T. Yamada, T. Hasegawa, T. Morita, M. Kurosawa and H. Funakubo, Jpn. J. Appl. Phys., 48, 09KA14(5p) (2009).10.1143/JJAP.48.09KA14 ↗
83. 83) T. Shiraishi, H. Einishi, S. Yasui, M. Ishikawa, T. Hasegawa, M. Kurosawa, H. Uchida, Y. Sakashita and H. Funakubo, Jpn. J. Appl. Phys., 50, 09ND11(4p) (2011).10.1143/JJAP.50.09ND11 ↗
84. 84) C. Sun, X. Xing, J. Chan, J. Deng, L. Li, R. Yu, L. Qiao and G. Liu, Eur. J. Inorg. Chem., 2007, 1884–1888 (2007).10.1002/ejic.200601131 ↗
85. 85) L. Su, K. Zhu, J. Qiu and H. Ji, J. Mater. Sci., 45, 3311–3317 (2010).10.1007/s10853-010-4348-0 ↗
86. 86) F. Zhang, L. Han, S. Bai, T. Sun, T. Karaki and M. Adachi, Jpn. J. Appl. Phys., 47, 7685–7688 (2008).10.1143/JJAP.47.7685 ↗