Self‐Encapsulated N‐Type Semiconducting Photoresist Toward Complementary Organic Electronics

Abstract Semiconducting photoresists hold great promise for scale‐up manufacturing of organic field‐effect transistors (OFETs) for integrated organic electronics. While photolithographic p‐type OFETs have achieved a considerable balance among patterning precision, electrical properties and process stability, it remains challenging for n‐type OFETs due to the inherent limited mobility and ambient instability. Herein, a n‐type semiconducting photoresist (SPr) is developed that is compatible with photolithography procedures. By utilizing the solvent‐driven force, a self‐encapsulated blend film with gradient semiconductor phase is prepared, where the underneath transistor active layer is protected by the upper cross‐linked network, avoiding solvent erosion and air doping. As such, a mobility up to 1.1 cm² V⁻¹ s⁻¹ that is comparable with amorphous Si is achieved, with remained mobility by ≈90% after long‐term exposure to developer and stripper or atmospheric conditions. The sub‐micrometer patterning accuracy of SPr enables the fabrication of organic transistor arrays with a density of 9 × 10⁵ units cm⁻¹, which is comparable to other state‐of‐the‐art devices fabricated by the printing or photolithography, demonstrating immense potential in integrated organic electronics.