Data Storage: Air‐Stable Cesium Lead Iodide Perovskite for Ultra‐Low Operating Voltage Resistive Switching (Adv. Funct. Mater. 5/2018)
Source abstract
Abstract
Cesium lead iodide (CsPbI3) perovskite, an all-inorganic halide perovskite, is synthesized on a platinum-coated silicon substrate for an ultra-low operating voltage resistive switching memory device by Soo Young Kim, Ho Won Jang, and co-workers in article number 1705783. An electrochemical metallization mechanism involving metal conducting filaments is proposed to explain the resistive switching behavior which can be applied to next-generation synaptic devices.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering Research Institute of Advanced Materials Seoul National University Seoul 08826 Republic of Korea
School of Chemical Engineering and Materials Science Chung‐Ang University Seoul 06974 Republic of Korea
References
Reference metadata was not supplied for this record.