Self-powered response in β-In2S3 thin films
Source abstract
Abstract
The development of highly efficient self-powered photodetector is a critical area of research for optoelectronic applications and the Internet of Things (IoT). In2S3 thin films grown using the spray pyrolysis technique were used for developing self-powered photodetectors. The structural, optical, morphological, elemental, compositional and electrical characterization of the thin films were carried out for optimization. The device structure “F:SnO2/ In2S3/Ag” optimized in this work, exhibited a self-powered photo-responsivity of ∼3.18 × 10−3AW−1, detectivity of ∼ 4.02 × 1010 Jones, and photosensitivity of ∼1.77 × 104 %. For our optimized device structure, an onset time delay between illumination with light and exhibition of photoconduction was observed which could be modelled to the effect of traps in the In2S3 system. We demonstrate the ability to switch ON/OFF the self-powered response in our optimized device structure using an external bias voltage presenting an opportunity for developing artificially intelligent photodetectors.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Perovskite Materials and Applications · Quantum Dots Synthesis And Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (75)
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