Enhanced Stability of Solution-Processed Indium–Zinc–Tin–Oxide Transistors by Tantalum Cation Doping
Source abstract
Abstract
Highly stable metal oxide thin film transistors (TFTs) are required in high-resolution displays and sensors. Here, we adopt a tantalum cation (Ta5+) doping method to improve the stability of zinc–tin–oxide (ZnSnO) TFTs. The results show that Ta5+-doped TaZnSnO TFT with 1 mol% concentration exhibits excellent stability. Compared with the undoped device, the oxygen vacancy defects of TaZnSnO thin films reduce from 38.05% to 18.70%, and the threshold voltage shift (ΔVth) reduces from 2.36 to 0.71 V under positive bias stress. We attribute the improved stability to the effective suppression of the oxygen vacancy defects, which is confirmed by the XPS results. In addition, we also prepared TaInZnSnO TFT devices with 1 mol% Ta5+ doping concentration. Compared with the 1 mol% Ta5+-doped TaZnSnO TFTs, the μ increases two-fold from 0.12 to 0.24 cm2/Vs, and the Vth decreases from 2.29 to 0.76 V in 1 mol% Ta5+-doped TaInZnSnO TFT with an In:Zn:Sn ratio of 4:4:3, while the device remains highly stable with a ΔVth of only 0.90 V. The injection of Ta5+ provides a novel strategy for the enhancement of the stability in ZnSnO-based TFTs.
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · ZnO doping and properties · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China
Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai 200072, China
School of Mechatronics and Automation, Shanghai University, Shanghai 200072, China
School of Microelectronics, Shanghai University, Shanghai 200072, China
Huzhou Key Laboratory of Medical and Environmental Applications Technologies, School of Life Sciences, Huzhou University, Huzhou 313000, China
Funding
National Natural Science Foundation of China
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