High-Quality 4H-SiC Homogeneous Epitaxy via Homemade Horizontal Hot-Wall Reactor
Source abstract
Abstract
In this paper, using a self-developed silicon carbide epitaxial reactor, we obtained high-quality 6-inch epitaxial wafers with doping concentration uniformity less than 2%, thickness uniformity less than 1% and roughness less than 0.2 nm on domestic substrates, which meets the application requirements of high-quality Schottky Barrier Diode (SBD) and Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET) devices. We found that increasing the carrier gas flow rate can minimize source gas depletion and optimize the doping uniformity of the 6-inch epitaxial wafer from over 5% to less than 2%. Moreover, reducing the C/Si ratio significantly can suppress the “two-dimensional nucleation growth mode” and improve the wafer surface roughness Ra from 1.82 nm to 0.16 nm.
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Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Electromagnetic Compatibility and Noise Suppression · HVDC Systems and Fault Protection
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of Precision Manufacturing for Extreme Service Performance, College of Mechanical and Electrical Engineering, Central South University, Changsha 410083, China
Changsha Semiconductor Process Equipment Institute, Changsha 410114, China
Funding
Science and Technology Projects of Hunan Province, China
References (46)
Show source-provided references
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