Improved Performance of Perovskite Deep-Ultraviolet Photodetector Using FAPb(I/Br)3 as Light Absorption Layer
Source abstract
Abstract
Constitutive engineering by adding halide anions is one effective way to improve the performance of photodetectors by adjusting the bandgap. In this study, a mixed-anion perovskite thin film was facile fabricated by post-processing of a pure FAPbI3 film with a formamidinium bromide (FABr) solution. In addition, the manufactured thin film was used as the light absorption layer, SnO2-SDBS as the electron transport layer, and spiro-OMeTAD as the hole injection layer to fabricate a deep ultraviolet(UV) photodetector. The device exhibited a response of 43.8 mA/W−1, a detectability of 3.56 × 1013 Jones, and an external quantum efficiency of 38%. Therefore, this study is promising for various applications in the deep-UV wavelength region.
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Research context
OpenAlex topics: Perovskite Materials and Applications · Ga2O3 and related materials · Luminescence Properties of Advanced Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical Engineering, Gachon University, Seongnam 13120, Republic of Korea
Department of Intelligent Mechatronics Engineering, Sejong University, Seoul 05006, Republic of Korea
Funding
Korea Basic Science Institute (National Research Facilities and Equipment Center) · Korea Institute for Advancement of Technology
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