Photodetector without Electron Transport Layer Based on Hexane-1,6-Diammonium Pentaiodobismuth (HDA-BiI5) Molecular Semiconductor
Source abstract
Abstract
With the development of the semiconductor industry, research on photoelectronic devices has been emphasized. In this paper, a molecular semiconductor material with a narrow bandgap of hexane-1,6-diammonium pentaiodobismuth (HDA-BiI5) was utilized to prepare photodetectors without electron transport layers. Using a single light source, the effects of different wavelengths and different powers on the photoresponsivity, switching ratio, specific detectivity, and external quantum efficiency of the device were investigated. It is demonstrated that this device has excellent responsivity, specific detectivity, stability, and repeatability, and this work will help expand the application of molecular semiconductor materials for photodetection.
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Research context
OpenAlex topics: Perovskite Materials and Applications · 2D Materials and Applications · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Beijing Advanced Innovation Center for Materials Genome Engineering, Research Center for Sensor Technology, Beijing Key Laboratory for Sensor, Beijing Key Laboratory for Optoelectronic Measurement Technology, MOE Key Laboratory for Modern Measurement and Control Technology, School of Automation, Beijing Information Science and Technology University, Jianxiangqiao Campus, Beijing 100101, China
References (38)
Show source-provided references
1. Organic light detectors: Photodiodes and phototransistors10.1002/adma.201204979 ↗
2. ZnO/poly(9,9-dihexylfluorene) based inorganic/organic hybrid ultraviolet photodetector
3. Highly efficient low reverse biased 4H-SiC schottky photodiodes for UV-light detection10.1109/LPT.2009.2033713 ↗
4. High spectrum selectivity organic/inorganic hybrid visible-blind ultraviolet photodetector based on ZnO nanorods
5. High-detectivity polymer photodetectors with spectral response from 300 nm to 1450 nm10.1126/science.1176706 ↗
6. Organic deep ultraviolet photodetector with response peak focusing on 270 nm using the acceptor BAlq10.1109/LPT.2011.2170192 ↗
7. Combining plasmonic hot carrier generation with free carrier absorption for high-performance near-infrared silicon-based photodetection10.1021/acsphotonics.8b00623 ↗
8. PbS-quantum-dots/double-wall-carbon-nanotubes nanohybrid based photodetectors with extremely fast response and high responsivity
9. Performance of ITO-free inverted organic bulk heterojunction photodetectors: Comparison with standard device architecture10.1016/j.orgel.2013.06.018 ↗
10. Conjugated polyelectrolyte and zinc oxide stacked structure as an interlayer in highly efficient and stable organic photovoltaic cells10.1039/c3ta10537g ↗
11. High performance ambient processed inverted polymer solar cells through interfacial modification with a fullerene self-assembled monolayer10.1063/1.3028094 ↗
12. Inverted polymer solar cells integrated with a low-temperature-annealed sol-gel-derived ZnO film as an electron transport layer10.1002/adma.201004301 ↗
13. Solution-processed zinc oxide thin film as a buffer layer for polymer solar cells with an inverted device structure10.1021/jp1003984 ↗
14. High-performance inverted structure broadband photodetector based on ZnO nanorods/PCDTBT:PCBM:PbS QDs10.1109/TED.2020.3026984 ↗
15. High sensitivity polymer visible-near infrared photo-detectors via an inverted device structure and manipulation of injection barrier height10.1002/smll.201600721 ↗
16. The narrowest band gap ever observed in molecular ferroelectrics: Hexane-1,6-diammonium pentaiodobismuth(III)10.1002/anie.201709588 ↗
17. Self-powered ultraviolet photodetector with super high photoresponsivity (3.05 a/w) based on the GaN/Sn:Ga2O3 pn junction10.1021/acsnano.8b07997 ↗
18. Thermo-photoelectric coupled effect induced electricity in N-type SnSe:Br single crystals for enhanced self-powered photodetectors10.1016/j.nanoen.2019.104111 ↗
19. Nanogenerator-based self-charging energy storage devices10.1007/s40820-019-0251-7 ↗
20. Hybrid organic–inorganic solar cells based on bismuth iodide and 1,6-hexanediammonium dication10.1039/C6TA00517A ↗
21. Polarization-enhanced photoelectric performance in a molecular ferroelectric hexane-1,6-diammonium pentaiodobismuth (HDA-BiI5)-based solar device10.1039/C9RA10839D ↗
22. Giant enhancements in electronic transport and photoelectric properties of bismuth oxysulfide by pressure-driven 2D–3D structural reconstruction10.1039/C8TA11168E ↗
23. Simultaneous enhancement of open-circuit voltage, short-circuit current density, and fill factor in polymer solar cells10.1002/adma.201103006 ↗
24. High-performance flexible broadband photodetector based on organolead halide perovskite10.1002/adfm.201402020 ↗
25. Colloidal quantum-dot photodetectors exploiting multiexciton generation10.1126/science.1173812 ↗
26. Enhanced self-powered UV photoresponse of ferroelectric BaTiO3 materials by pyroelectric effect10.1016/j.nanoen.2017.08.043 ↗
27. Visible or near-infrared light self-powered photodetectors based on transparent ferroelectric ceramics10.1021/acsami.0c09991 ↗
28. Photovoltaic–pyroelectric coupled effect induced electricity for self-powered photodetector system10.1002/adma.201703694 ↗
29. Photovoltaic-pyroelectric coupled effect based nanogenerators for self-powered photo-detector system10.1002/admi.201701189 ↗
30. Self-driven ultraviolet photodetectors based on ferroelectric depolarization field and interfacial potential10.1016/j.sna.2020.112267 ↗
31. Boosted photocurrent in ferroelectric BaTiO3 materials via two dimensional planar-structured contact configurations10.1016/j.nanoen.2018.05.069 ↗
32. Achieving light-induced ultrahigh pyroelectric charge density toward self-powered UV light detection10.1002/aelm.201800413 ↗
33. Ultrahigh-performance self-powered flexible photodetector driven from photogating, piezo-phototronic, and ferroelectric effects10.1002/adom.201901334 ↗
34. Nature of electronic states in atomically thin MoS2 field-effect transistors10.1021/nn202852j ↗
35. Ultrasensitive photodetectors based on monolayer MoS210.1038/nnano.2013.100 ↗
36. High performance and bendable few-layered InSe photodetectors with broad spectral response10.1021/nl500817g ↗
37. Electrically excited plasmonic ultraviolet light sources10.1002/smll.202100819 ↗
38. Self-powered solar-blind photodetector with fast response based on Au/β-Ga2O3 nanowires array film schottky junction10.1021/acsami.5b11956 ↗