In Situ Modulation of Oxygen Vacancy Concentration in Hf0.5Zr0.5O2−x Thin Films and the Mechanism of Its Impact on Ferroelectricity
Source abstract
Abstract
Oxygen vacancies play a crucial role in stabilizing the ferroelectric phase in hafnium (Hf) oxide-based thin films and in shaping the evolution of their ferroelectric properties. In this study, we directly manipulated the oxygen vacancy concentration in Hf0.5Zr0.5O2−x (HZO) ferroelectric thin films in situ using oxygen plasma treatment. We scrutinized the variations in the ferroelectric properties of HZO films across different oxygen vacancy concentrations by integrating the findings from ferroelectric performance tests. Additionally, we elucidated the mechanism underlying the influence of oxygen vacancies on the coercive field and polarization properties of HZO ferroelectric films through the first-principles density functional theory (DFT) calculations. Finally, to study the impact of oxygen vacancies on the practical application of HZO ferroelectric synaptic devices, leveraging the plasticity of the ferroelectric polarization, we constructed a multilayer perceptron (MLP) network. We simulated its recognition accuracy and convergence speed under different oxygen vacancy concentrations in the MNIST recognition task.
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Research context
OpenAlex topics: Ferroelectric and Negative Capacitance Devices · MXene and MAX Phase Materials · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Mechanical Engineering and Mechanics, Xiangtan University, Xiangtan 411105, China
School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China
Funding
National Natural Science Foundation of China · Provincial Natural Science Foundation of Hunan · National Key Research and Development Program of China
References (36)
Show source-provided references
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