A Deep Insight into the Electronic Properties of CIGS Modules with Monolithic Interconnects Based on 2D Simulations with TCAD
Source abstract
Abstract
The aim of this work is to provide an insight into the impact of the P1 shunt on the performance of ZnO/CdS/Cu(In,Ga)Se2/Mo modules with monolithic interconnects. The P1 scribe is a pattern that separates the back contact of two adjacent cells and is filled with Cu(In,Ga)Se2 (CIGS). This scribe introduces a shunt that can affect significantly the behavior of the device, especially under weak light conditions. Based on 2D numerical simulations performed with TCAD, we postulate a mechanism that affects the current flow through the P1 shunt. This mechanism is similar to that of a junction field effect transistor device with a p-type channel, in which the current flow can be modulated by varying the thickness of the channel and the doping concentration. The results of these simulations suggest that expanding the space charge region (SCR) into P1 reduces the shunt conductance in this path significantly, thus decreasing the current flow through it. The presented simulations demonstrate that two fabrication parameters have a direct influence on the extension of the SCR, which are the thickness of the absorber layer and its acceptor concentration.
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Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Instituto de Energía Solar, Universidad Politécnica de Madrid, 28040 Madrid, Spain
Institute of Medical Engineering and Mechatronics, Ulm University of Applied Sciences, 89081 Ulm, Germany
Funding
Bundesministerium für Wirtschaft und Energie
References (27)
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