Study of the Annealing Effect on the γ-Phase Aluminum Oxide Films Prepared by the High-Vacuum MOCVD System
Source abstract
Abstract
γ-phase aluminum oxide (γ-Al2O3) films are grown on MgO (100) wafers by metal organic chemical vapor deposition (MOCVD). Post-annealing process is conducted to study the influence of annealing temperature on the properties of the films. Structural analyses indicate that all the deposited and annealed films present a preferred growth orientation of γ-Al2O3 (220) along the MgO (200) direction. And the film annealed at 1100 °C exhibits the best film quality compared with those of the films grown and annealed at other temperatures. Scanning electron microscopy measurements also imply the best surface morphology for the γ-Al2O3 film annealed at 1100 °C, which is in good accordance with the structural analyses. Optical transmittance spectra show good transparency for all the deposited and annealed films in the visible wavelength region with an average transmittance value of 83.5%. The optical bandgaps are estimated to be in the range of 5.56–5.79 eV for the deposited and annealed films. Semiconductor films with high optical transmittance in the visible region as well as wide bandgaps are appropriate for the manufacture of transparent optoelectronic devices and ultraviolet optoelectronic devices.
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Research context
OpenAlex topics: ZnO doping and properties · Semiconductor materials and devices · GaN-based semiconductor devices and materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, China
Funding
Natural Science Foundation of Shandong Province
References (50)
Show source-provided references
1. Management of singlet and triplet excitons for efficient white organic light-emitting devices
2. Surface acoustic wave ultraviolet detector based on zinc oxide nanowire sensing layer10.1016/j.sna.2012.06.017 ↗
3. Solution-processed zinc tin oxide semiconductor for thin-film transistors10.1021/jp803475g ↗
4. Highly efficient photon-to-electron conversion with mercurochrome-sensitized nanoporous oxide semiconductor solar cells10.1016/S0927-0248(00)00065-9 ↗
5. Energy bandgap variation in oblique angle-deposited indium tin oxide10.1063/1.4940998 ↗
6. Oxygen vacancy induced band gap narrowing of ZnO nanostructures by an electrochemically active biofilm10.1039/c3nr02678g ↗
7. Structural and mechanical properties of zinc aluminoborate glasses with different content of aluminum oxide10.1007/s10854-016-6103-z ↗
8. ITO/Ag/AlN/Al2O3 multilayer electrodes with conductive channels: Application in ultraviolet light-emitting diodes10.1016/j.jallcom.2018.01.122 ↗
9. Transparent capacitors based on nanolaminate Al2O3/TiO2/Al2O3 with H2O and O3 as oxidizers10.1063/1.4872470 ↗
10. Structure of the hydrated α-Al2O3 (0001) surface10.1126/science.288.5468.1029 ↗
11. Nucleation and concurrent anomalous grain growth of α-Al2O3 during γ-α phase transformation10.1111/j.1151-2916.1991.tb08295.x ↗
12. Suppression of inherent ferromagnetism in Pr-doped CeO2 nanocrystals10.1039/c2nr30799e ↗
13. Structural, morphological and optical investigations of θ-Al2O3 ultrafine powder10.1016/j.jallcom.2017.05.085 ↗
14. Mechanism for the κ−Al2O3 to the α−Al2O3 transition and the stability of κ-Al2O3 under volume expansion10.1103/PhysRevB.61.3131 ↗
15. Standard transition aluminas. Electron microscopy studies10.1590/S1516-14392000000400003 ↗
16. High temperature mechanical behavior of Al2O3–MgO–C refractories for steelmaking use10.1016/j.ceramint.2010.12.019 ↗
17. Grass-like alumina with low refractive index for scalable, broadband, omnidirectional antireflection coatings on glass using atomic layer deposition10.1021/acsami.7b01733 ↗
18. Microstructure characteristics of the reaction product region formed due to the high temperature contact of molten aluminium and ZnO single crystal
19. Surface orientation and wetting phenomena in Si/α-alumina system at 1723 K10.1111/j.1551-2916.2005.00180.x ↗
20. Favorable deposition of γ-Al2O3 coatings by cathode plasma electrolysis for high-temperature application of Ti-45Al-8.5Nb alloys10.1016/j.surfcoat.2017.11.005 ↗
21. Preparation of γ-Al2O3 nanoparticles using modified sol-gel method and its use for the adsorption of lead and cadmium ions10.1016/j.jallcom.2017.09.246 ↗
22. Vanadium effect over γ-Al2O3-supported Ni catalysts for valorization of glycerol10.1016/j.fuproc.2021.106773 ↗
23. Luminescent properties and energy transfer of luminescent carbon dots assembled mesoporous Al2O3: Eu3+ co-doped materials for temperature sensing10.1016/j.jcis.2017.02.013 ↗
24. Effect of Al2O3 and La2O3 on structure and spectroscopic properties of Nd-doped sol–gel silica glasses10.1016/j.jlumin.2018.08.015 ↗
25. NIR luminescence from Er–Yb, Bi–Yb and Bi–Nd codoped germanate glasses for optical amplification10.1016/j.jallcom.2008.09.135 ↗
26. Spectral response characteristics of Eu3+ doped YAG-Al2O3 composite nanofibers reinforced aluminum matrix composites10.1016/j.optmat.2020.109845 ↗
27. Low-temperature deposition of nanocrystalline Al2O3 films by ion source-assisted magnetron sputtering10.1016/j.vacuum.2018.01.009 ↗
28. Study on deposition of Al2O3 films by plasma-assisted atomic layer with different plasma sources10.1088/2058-6272/aaacc7 ↗
29. Optical properties of amorphous Al2O3 thin films prepared by a sol–gel process10.1016/j.ceramint.2014.05.148 ↗
30. Spray pyrolytic deposition of transparent aluminum oxide (Al2O3) films10.1016/j.apsusc.2011.09.040 ↗
31. Annealing effects on electron-beam evaporated Al2O3 films10.1016/j.apsusc.2004.09.047 ↗
32. PLD deposited Al2O3 thin films for transparent electronics
33. Amorphous-like nanocrystalline γ-Al2O3 films prepared by MOCVD10.1016/j.surfcoat.2009.11.043 ↗
34. Effect of post-annealing temperatures on thin-film transistors with ZnO/Al2O3 su-perlattice channels10.1016/j.tsf.2015.01.017 ↗
35. Electronic and optical properties of Al2O3/SiO2 thin films grown on Si substrate10.1088/0022-3727/43/25/255301 ↗
36. X-ray photoelectron spectroscopy: Towards reliable binding energy referencing10.1016/j.pmatsci.2019.100591 ↗
37. Influence of annealing environment on the ALD-Al2O3/4H-SiC interface studied through XPS10.1088/1361-6463/aaa9a1 ↗
38. Charge-transfer effect of GZO film on photochemical water splitting of transparent ZnO@ GZO films by RF magnetron sputtering10.1007/s11244-018-0916-3 ↗
39. Thickness dependence of In2O3:Sn film growth10.1016/j.tsf.2004.02.094 ↗
40. Influence of annealing temperature on In2O3 properties grown by an ultrasonic spray CVD process10.1016/j.ijleo.2016.04.100 ↗
41. Growth mechanism and optoelectronic properties of nanocrystalline In2O3 films prepared by chemical spray pyrolysis of metal-organic precursor10.1016/j.physb.2007.09.076 ↗
42. Effect of annealing temperature on a single step processed Cu2ZnSnS4 thin film via solution method10.1016/j.tsf.2016.03.037 ↗
43. Luminescent Ta doped WO3 thin films as a probable candidate for excitonic solar cell applications10.1016/j.apsusc.2018.10.007 ↗
44. High-performance staggered top-gate thin-film transistors with hybrid-phase microstructural ITO-stabilized ZnO channels10.1063/1.4966900 ↗
45. Electronic properties of bulk γ−Al2O310.1103/PhysRevB.72.035116 ↗
46. Band gap of amorphous and well-ordered Al2O3 on Ni3Al(100)10.1063/1.1380403 ↗
47. Effects of pH and calcination temperature on structural and optical properties of alumina nanoparticles10.1016/j.spmi.2015.01.044 ↗
48. Low-voltage ZnO thin-film transistors based on Y2O3 and Al2O3 high-k dielectrics deposited by spray pyrolysis in air10.1063/1.3568893 ↗
49. Effect of thermal annealing on the optical and structural properties of γ-Al2O3 films prepared on MgO substrates by MOCVD10.1016/j.ceramint.2015.08.145 ↗
50. Preparation and electrical properties of N-doped ZnSnO thin film transistors10.1016/j.jallcom.2018.02.198 ↗