In-Situ Growth and Characterization of Indium Tin Oxide Nanocrystal Rods
Source abstract
Abstract
Indium tin oxide (ITO) nanocrystal rods were synthesized in-situ by a vapor-liquid-solid (VLS) method and electron beam evaporation technique. When the electron-beam gun bombarded indium oxide (In2O3) and tin oxide (SnO2) mixed sources, indium and tin droplets appeared and acted as catalysts. The nanocrystal rods were in-situ grown on the basis of the metal catalyst point. The nanorods have a single crystal structure. Its structure was confirmed by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The surface morphology was analyzed by scanning electron microscopy (SEM). During the evaporation, a chemical process was happened and an In2O3 and SnO2 solid solution was formed. The percentage of doped tin oxide was calculated by Vegard’s law to be 3.18%, which was in agreement with the mixture ratio of the experimental data. The single crystal rod had good semiconductor switch property and its threshold voltage of single rod was approximately 2.5 V which can be used as a micro switch device. The transmission rate of crystalline nanorods ITO film was over 90% in visible band and it was up to 95% in the blue green band as a result of the oxygen vacancy recombination luminescence.
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Research context
OpenAlex topics: ZnO doping and properties · Nanowire Synthesis and Applications · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Material Science and Engineering, Qilu University of Technology, Jinan 250353, China
State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
References (30)
Show source-provided references
1. Nitride-based light-emitting diodes with Ni/ITO p-type ohmic contacts10.1109/LPT.2002.804649 ↗
2. Zinc-indium-oxide: A high conductivity transparent conducting oxide10.1063/1.115118 ↗
3. Large optical nonlinearity of indium tin oxide in its epsilon-near-zero region10.1126/science.aae0330 ↗
4. Effects of indium–tin oxide film morphologies on light-output characteristics of GaN-based light-emitting diodes10.1166/jno.2014.1624 ↗
5. InGaN/GaN quantum well interconnected microdisk light emitting diodes10.1063/1.1326479 ↗
6. Copercolating networks: An approach for realizing high-performance transparent conductors using multicomponent nanostructured networks10.1515/nanoph-2016-0036 ↗
7. Deep UV Ta2O5/zinc-indium-tin-oxide thin film photo-transistor10.1109/LPT.2012.2193564 ↗
8. Fabrication of three-dimensional hybrid nanostructure-embedded ITO and its application as a transparent electrode for high-efficiency solution processable organic photovoltaic devices10.1039/C6NR06552J ↗
9. Engineered omnidirectional antireflection ITO nanorod films with super hydrophobic surface via glancing-angle ion-assisted electron-beam evaporation deposition10.1016/j.cap.2016.11.018 ↗
10. Widely tunable localized surface plasmon scattering in mesoporous ITO electrodes10.1557/adv.2015.50 ↗
11. Design and development of plasmonic nanostructured electrodes for ITO-free organic photovoltaic cells on rigid and highly flexible substrates10.1088/1361-6528/aa63b2 ↗
12. Sensitivity and selectivity of SnO2-based sensor for CO and H2 detections: A novel method to detect simultaneously the CO and H2 concentrations10.4028/www.scientific.net/AST.99.40 ↗
13. A new strategy for humidity independent oxide chemiresistors: Dynamic self-refreshing of In2O3 sensing surface assisted by layer-by-layer coated CeO2 nanoclusters10.1002/smll.201601507 ↗
14. Quartz crystal microbalance coated with sol–gel-derived indium–tin oxide thin films as gas sensor for NO detection10.1016/j.colsurfa.2004.01.010 ↗
15. Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress10.1063/1.3272016 ↗
16. Present status of transparent conducting oxide thin-film development for Indium-Tin-Oxide (ITO) substitutes10.1016/j.tsf.2007.10.063 ↗
17. Lyubchyk, A., Vicente, A., Soule, B., Alves, P.U., Mateus, T., Mendes, M.J., Águas, H., Fortunato, E., and Martins, R. (2016). Mapping the electrical properties of ZnO-based transparent conductive oxides grown at room temperature and improved by controlled postdeposition annealing. Adv. Electron. Mater., 2.10.1002/aelm.201500287 ↗
18. Wafer-scale growth of ITO nanorods by radio frequency magnetron sputtering deposition10.1149/1.3562943 ↗
19. Films and nanorods of transparent conducting oxide ITO by a citric acid sol route10.1007/s00339-004-2738-3 ↗
20. Substrate temperature effect on transparent heat reflecting nanocrystalline ITO films prepared by electron beam evaporation10.1016/j.renene.2009.10.034 ↗
21. Role of annealing environment on the performances of large area ITO films produced by RF magnetron sputtering10.1016/j.tsf.2005.01.078 ↗
22. Performance improvement mechanisms of bias-assisted photoelectrochemical treated GaSb-based solar cells with ITO nanorod array10.1002/pip.2658 ↗
23. Chen, K., Guo, P., Dao, T.D., Li, S.Q., Ishiii, S., Nagao, T., and Chang, R.P.H. (2017). Protein-functionalized indium-tin oxide nanoantenna arrays for selective infrared biosensing. Adv. Opt. Mater., 1700091.10.1002/adom.201700091 ↗
24. Nanostructured transparent conductive films: Fabrication, characterization and applications10.1016/j.mser.2016.08.002 ↗
25. Vapor-liquid-solid mechanism of single crystal growth10.1063/1.1753975 ↗
26. Wagner, R.S., and Levitt, A.P. (1970). Whisker Technology, AP Levitt Wiley.
27. Nucleation and growth of thin films10.1088/0034-4885/47/4/002 ↗
28. Relaxation process of the thermal strain in the GaN/α-Al2O3 heterostructure and determination of the intrinsic lattice constants of GaN free from the strain10.1143/JJAP.31.L1454 ↗
29. Tin doped indium oxide thin films: Electrical properties10.1063/1.367025 ↗
30. Study of quasi-monodisperse In2O3 nanocrystals: Synthesis and optical determination10.1021/ja042550t ↗