Improving Transport Properties of GaN-Based HEMT on Si (111) by Controlling SiH4 Flow Rate of the SiNx Nano-Mask
Source abstract
Abstract
The AlGaN/AlN/GaN high electron mobility transistor structures were grown on a Si (111) substrate by metalorganic chemical vapor deposition in combination with the insertion of a SiNx nano-mask into the low-temperature GaN buffer layer. Herein, the impact of SiH4 flow rate on two-dimensional electron gas (2DEG) properties was comprehensively investigated, where an increase in SiH4 flow rate resulted in a decrease in edge-type threading dislocation density during coalescence process and an improvement of 2DEG electronic properties. The study also reveals that controlling the SiH4 flow rate of the SiNx nano-mask grown at low temperatures in a short time is an effective strategy to overcome the surface desorption issue that causes surface roughness degradation. The highest electron mobility of 1970 cm2/V·s and sheet carrier concentration of 6.42 × 1012 cm−2 can be achieved via an optimized SiH4 flow rate of 50 sccm.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan
Technology Development Division, Episil-Precision Inc., Hsinchu 30010, Taiwan
Funding
National Science Council, Taiwan, R.O.C.
References (44)
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