Effects of Yttrium Doping on a-IGZO Thin Films for Use as a Channel Layer in Thin-Film Transistors
Source abstract
Abstract
Amorphous In−Ga−Zn−O (a-IGZO) has been studied as a channel layer in thin-film transistors (TFTs). To improve the bias-induced instability of a-IGZO TFTs, we introduced yttrium with high bond enthalpy by magnetron co-sputtering system. The Y-doped a-IGZO (a-IGZO:Y) films show relatively lower carrier concentration and higher Hall mobility, which is due to the suppression of oxygen vacancies caused by Y doping. The a-IGZO:Y showed a relatively higher transmittance in the visible light region compared to non-doped IGZO, which could be due to the decrease of shallow defect levels caused by oxygen vacancy in the band gap. The a-IGZO without Y doping showed dramatic changes in electrical properties as times progressed (over 240 h); however, the a-IGZO:Y showed no significant changes. The a-IGZO:Y TFTs demonstrated a more stable driving mode as exhibited in the positive gate bias stress test even though the values of VTH and SS were slightly degraded.
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Research context
OpenAlex topics: Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering, Pusan National University, Busan 46241, Korea
Department of Electronics Engineering, Pusan National University, Busan 46241, Korea
Ukseong Chemical Company, Busan 46259, Korea
Funding
National Research Foundation of Korea
References (23)
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