New Low-Voltage Driving Compensating Pixel Circuit Based on High-Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistors for High-Resolution Portable Active-Matrix OLED Displays
Source abstract
Abstract
In recent years, active-matrix organic light-emitting diodes (AMOLEDs) has been the most popular display for portable application. To satisfy the requirement for the application of the portable display, the design of the compensating pixel circuit with the low-voltage driving and low-power consumption will be requested. In addition to the circuit with the design of the low-voltage driving, high-mobility thin-film transistors as driving device will be also necessary in order to supply larger driving current at low-voltage driving. Therefore, the study presents a new low-voltage driving AMOLED pixel circuit with high-mobility amorphous indium–zinc–tin–oxide (a-IZTO) thin-film transistors (TFTs) as driving device for portable displays with high resolution. The proposed pixel circuit can simultaneously compensate for the threshold voltage variation of driving TFT (ΔVTH_TFT), OLED degradation (ΔVTH_OLED), and the I-R drop of a power line (ΔVDD). By using AIM-Spice for simulation based on fabricated a-IZTO TFTs with mobility of 70 cm2V−1S−1 as driving devices, we discovered that the error rates of the driving current were all lower than 5.71% for all input data when ΔVTH_TFT = ±1 V, ΔVDD = 0.5 V, and ΔVTH_OLED = 0.5 V were all considered simultaneously. We revealed that the proposed 5T2C pixel circuit containing a high-mobility a-IZTO TFT as a driving device was suitable for high-resolution portable displays.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Thin-Film Transistor Technologies · ZnO doping and properties · Transition Metal Oxide Nanomaterials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Da’an Dist., Taipei City 106, Taiwan
Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Da’an Dist., Taipei City 106, Taiwan
References (22)
Show source-provided references
1. Dawson, R.M.A., Shen, Z., Furst, D.A., Connor, S., Hsu, J., Kane, M.G., Stewart, R.G., Ipri, A., King, C.N., and Green, P.J. (1998, January 6–9). The impact of the transient response of organic light emitting diodes on the design of active matrix OLED displays. Proceedings of the International Electron Devices Meeting 1998, Technical Digest (Cat. No.98CH36217), San Francisco, CA, USA.
2. One gate diode-connected dual-gate a-IGZO TFT driven pixel circuit for active matrix organic light-emitting diode displays10.1109/TED.2016.2587718 ↗
3. Novel LTPS-TFT pixel circuit with OLED luminance compensation for 3D AMOLED displays10.1109/JDT.2016.2525736 ↗
4. A novel LTPS-TFT pixel circuit compensating for TFT threshold-voltage shift and OLED degradation for AMOLED10.1109/LED.2006.889523 ↗
5. A new pixel circuit compensating for brightness variation in large size and high resolution AMOLED displays10.1109/JDT.2007.900921 ↗
6. Pixel circuit with leakage prevention scheme for low-frame-rate AMOLED displays10.1109/JEDS.2020.2974576 ↗
7. Driving schemes for a-Si and LTPS AMOLED displays10.1109/JDT.2005.858913 ↗
8. Low–temperature fabrication of HfAlO alloy dielectric using atomic–layer deposition and its application in a low–power device10.1016/j.jallcom.2019.04.015 ↗
9. New a-IGZO pixel circuit composed of three transistors and one capacitor for use in high-speed-scan AMOLED displays10.1109/JDT.2015.2494064 ↗
10. Flexible AMOLED based on oxide TFT with high mobility10.1002/sdtp.11604 ↗
11. Effect of annealing on defect elimination for high mobility amorphous indium-zinc-tin-oxide thin-film transistor10.1109/LED.2014.2354598 ↗
12. Achieving high field-effect mobility exceeding 50 cm2/Vs in In-Zn-Sn-O thin-film transistors10.1109/LED.2014.2329892 ↗
13. Highly stable, solution-processed Ga-doped IZTO thin film transistor by Ar/O2 plasma treatment10.1002/aelm.201900768 ↗
14. Effect of the active channel thickness variation in amorphous In–Zn–Sn–O thin film transistor
15. Effect of thermal annealing on the electrical characteristics of an amorphous ITZO:Li thin film transistor fabricated using the magnetron sputtering method10.1016/j.mssp.2019.02.005 ↗
16. VT compensation circuit for AM OLED displays composed of two TFTs and one capacitor10.1109/TED.2006.890365 ↗
17. A novel a-InGaZnO TFT pixel circuit for AMOLED display with the enhanced reliability and aperture ratio10.1109/JDT.2013.2280026 ↗
18. High resolution a-IGZO TFT pixel circuit for compensating threshold voltage shifts and OLED degradations10.1109/JEDS.2017.2716368 ↗
19. a-InGaZnO active-matrix organic LED pixel periodically detecting thin-film transistor threshold voltage once for multiple frames10.1109/LED.2015.2480861 ↗
20. Novel top-anode OLED/a-IGZO TFTs pixel circuit for 8K4K AM-OLEDs10.1109/TED.2018.2877945 ↗
21. Sze, S.M. (2018). Physics of Semiconductor Devices, National Taiwan University Press.
22. External compensation of nonuniform electrical characteristics of thin-film transistors and degradation of OLED devices in AMOLED displays10.1109/LED.2009.2014885 ↗