The Influence of Oxygen Flow Ratio on the Optoelectronic Properties of p-Type Ni1−xO Films Deposited by Ion Beam Assisted Sputtering
Source abstract
Abstract
In this work, p-type non-stoichiometric Ni1−xO thin films were deposited by oxygen ion beam assisted RF sputtering on glass substrates. The influence of the oxygen flow ratio (0–100%) on the films’ optoelectronic properties was investigated. In our experimental conditions, all the films are crystallized in the cubic NiO phase. However, their crystallinity and mean grain size decreases with increasing oxygen flow ratios. Meanwhile, the films’ conductivity improves from 9.1 to 25.4 S·cm−1. This is due to the fact that the nickel vacancies along with hole carriers can be introduced into NiO films when they are deposited under higher oxygen flow ratio conditions. Thus, the O-rich environment is beneficial in enhancing the films’ carrier concentrations. In addition, with an increasing oxygen flow ratio, the film’s transmittance degrades. The direct optical band gap of Ni1−xO films declines slightly from 3.99 to 3.95 eV, with the oxygen flow ratio increasing from 0% to 100%.
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Research context
OpenAlex topics: ZnO doping and properties · Transition Metal Oxide Nanomaterials · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Space Science and Physics, Shandong University at Weihai, 180 Wenhuaxi Road, Weihai 264209, China
Department of Materials Engineering and Center for Thin Film Technologies and Applications, Ming Chi University of Technology, Taipei 243, Taiwan
Department of Electronic Engineering, Chang Gung University, Taoyuan 333, Taiwan
Institute of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan
Institute of Materials Science and Engineering, Ocean University of China, 238 Songling Road, Qingdao 266100, China
Funding
Shandong Province Natural Science Foundation · National Natural Science Foundation of China · Ministry of Science and Technology of Taiwan
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