Improvement of Plasma Resistance of Anodic Aluminum-Oxide Film in Sulfuric Acid Containing Cerium(IV) Ion
Source abstract
Abstract
The parts of equipment in a process chamber for semiconductors are protected with an anodic aluminum-oxide (AAO) film to prevent plasma corrosion. We added cerium(IV) ions to sulfuric acid in the anodizing of an AAO film to improve the plasma corrosion resistance, and confirmed that the AAO film thickness increased by up to ~20% when using 3 mM cerium(IV) ions compared with general anodizing. The α-Al2O3 phase increased with increasing cerium(IV) ion concentration. The breakdown voltage and etching rate improved to ~35% and 40%, respectively. The film’s performance regarding the generation of contamination particles reduced by ~50%.
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Research context
OpenAlex topics: Anodic Oxide Films and Nanostructures · Concrete Corrosion and Durability · Smart Materials for Construction
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical Engineering, Hanyang University, Seoul 04763, Korea
Center for Materials and Energy Measurement, Korea Research Institute of Standards and Science, Daejeon 34113, Korea
Department of Advanced Materials Engineering, Daejeon University, Daejeon 34520, Korea
Division of Nano & Information Technology, University of Science and Technology, Daejeon 34113, Korea
Funding
Ministry of Trade, Industry and Energy · Chung-Ang University
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