Effect of SiO2 Layer Thickness on SiO2/Si3N4 Multilayered Thin Films
Source abstract
Abstract
Silicon nitride (Si3N4) materials are widely used in the electronics, optoelectronics, and semiconductor industries, with Si3N4 thin films exhibiting high densities, high dielectric constants, good insulation performance, and good thermal and chemical stability. However, direct deposition of Si3N4 thin films on glass can result in considerable tensile stress and cracking. In this study, magnetron sputtering was used to deposit a Si3N4 thin film on glass, and a silicon dioxide (SiO2) thin film was introduced to reduce the Si3N4 binding force and stress. The effect of the SiO2 layer thickness on the SiO2/Si3N4 multilayered thin film was explored. The results indicated that the introduction of the SiO2 layer could improve the weak adhesion characteristics of Si3N4 thin films. Moreover, sputtering the SiO2 layer to 150 nm resulted in the highest hardness and transmittance of the SiO2/Si3N4 multilayered thin films. The findings of this study lay a solid foundation for the application of Si3N4 thin films on glass.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced ceramic materials synthesis · Thin-Film Transistor Technologies · Advanced Surface Polishing Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of Marine Resources Utilization in South China Sea & Special Glass Key Laboratory of Hainan Province, Hainan University, Haikou 570228, China
Funding
Joint Fund Project of National Natural Science Foundation of China · Key Scientific & Technological Project of Hainan Province
References (25)
Show source-provided references
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