Reactive Sputter Deposition of Ga2O3 Thin Films Using Liquid Ga Target
Source abstract
Abstract
Ga2O3 is a promising material in the optoelectronics and semiconductor industry. In this work, gallium oxide thin films were deposited via radio frequency (RF) sputtering, using a liquid Ga target. The reactive sputtering was carried out using different oxygen flow rates and DC target potentials induced via the RF power. The thickness of the samples varied between 160 nm and 460 nm, depending on the preparation conditions. The composition and the refractive index of the layers were investigated via energy-dispersive spectroscopy, X-ray photoelectron spectroscopy, and spectroscopic ellipsometry, respectively. It was found that, through the use of a lower DC target potential, a better film quality and higher oxygen content can be achieved. The reactive sputtering was modeled based on the Berg model, with the aim of determining the sputtering yields and the sticking coefficient. It was shown that an increase in DC target potential leads to the preferential sputtering of gallium.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · GaN-based semiconductor devices and materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute for Technical Physics and Materials Science, Centre for Energy Research, H-1121 Budapest, Hungary
Funding
New Semiconductor Materials · Hungarian Scientific Research Fund OTKA
References (30)
Show source-provided references
1. A Review of Ga2O3 Materials, Processing, and Devices10.1063/1.5006941 ↗
2. β-Ga2O3 for Wide-Bandgap Electronics and Optoelectronics10.1088/1361-6641/aadf78 ↗
3. High Transmittance β-Ga2O3 Thin Films Deposited by Magnetron Sputtering and Post-Annealing for Solar-Blind Ultraviolet Photodetector10.1016/j.jallcom.2019.06.224 ↗
4. UV-Enhanced CO Sensing Using Ga2O3-Based Nanorod Arrays at Elevated Temperature10.1063/1.4974213 ↗
5. Review—RF Sputtered Films of Ga2O310.1149/2.0141907jss ↗
6. Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy10.1143/APEX.5.035502 ↗
7. Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire10.1021/acs.inorgchem.6b02244 ↗
8. Homoepitaxial Growth of β-Ga2O3 Layers by Halide Vapor Phase Epitaxy10.7567/APEX.8.015503 ↗
9. Ellipsometric Determination of Anisotropic Optical Constants of Single Phase Ga2O3 Thin Films in Its Orthorhombic and Monoclinic Phases10.1016/j.optmat.2020.109807 ↗
10. Annealing Induced Phase Transition and Optical Properties of Ga2O3 Thin Films Synthesized by Sputtering Technique10.1016/j.ijleo.2021.167515 ↗
11. Gallium Oxide Films Deposition by RF Magnetron Sputtering; a Detailed Analysis on the Effects of Deposition Pressure and Sputtering Power and Annealing10.1016/j.ceramint.2020.08.289 ↗
12. The Influence of Sputtering Power on the Structural, Morphological and Optical Properties of β-Ga2O3 Thin Films10.1016/j.jallcom.2018.04.196 ↗
13. Highly Preferred Orientation of Ga2O3 Films Sputtered on SiC Substrates for Deep UV Photodetector Application10.1016/j.apsusc.2018.12.045 ↗
14. The Structural and Photoelectrical Properties of Gallium Oxide Thin Film Grown by Radio Frequency Magnetron Sputtering10.1149/2.0161907jss ↗
15. Formation of Various Phases of Gallium Oxide Films Depending on Substrate Planes and Deposition Gases10.1016/j.vacuum.2015.10.009 ↗
16. Characterization of Non-Stoichiometric Ga2O3-x Thin Films Grown by Radio-Frequency Powder Sputtering10.1016/j.ceramint.2020.09.162 ↗
17. Optical and Structural Characterization of High Crystalline β-Ga2O3 Films Prepared Using an RF Magnetron Sputtering10.1016/j.jallcom.2021.162551 ↗
18. Effect of Deposition Pressure on the Structural and Optical Properties of Ga2O3 Films Obtained by Thermal Post-Crystallization10.1039/C7CE01567D ↗
19. Effect of Annealing Temperature on β-Ga2O3 Thin Films Deposited by RF Sputtering Method10.1016/j.spmi.2021.106976 ↗
20. Effects of Post-Annealing Temperature and Oxygen Concentration during Sputtering on the Structural and Optical Properties of β-Ga2O3 Films10.1116/1.4963376 ↗
21. Deposition of Ga2O3 Thin Films by Liquid Metal Target Sputtering10.1016/j.vacuum.2022.111789 ↗
22. Fundamental Understanding and Modeling of Reactive Sputtering Processes10.1016/j.tsf.2004.10.051 ↗
23. Upgrading the “Berg-Model” for Reactive Sputtering Processes10.1016/j.tsf.2014.02.063 ↗
24. Parametrization of the optical functions of amorphous materials in the interband region10.1063/1.118064 ↗
25. Hegedüs, N., Balázsi, C., Kolonits, T., Olasz, D., Sáfrán, G., Serényi, M., and Balázsi, K. (2022). Investigation of the RF Sputtering Process and the Properties of Deposited Silicon Oxynitride Layers under Varying Reactive Gas Conditions. Materials, 15.10.3390/ma15186313 ↗
26. Thickness Dependent Optical Properties of Amorphous/Polycrystalline Ga2O3 Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition10.1016/j.tsf.2022.139655 ↗
27. Li, S., Yang, C., Zhang, J., Dong, L., Cai, C., Liang, H., and Liu, W. (2020). Tunable Optical Properties of Amorphous-Like Ga2O3 Thin Films Deposited by Electron-Beam Evaporation with Varying Oxygen Partial Pressures. Nanomaterials, 10.10.3390/nano10091760 ↗
28. Oxide-Growth Kinetics and Fractal-like Patterning across Liquid Gallium Surfaces10.1103/PhysRevB.46.11346 ↗
29. Ziegler, J.F., Ziegler, M.D., and Biersack, J.P. (2012). Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier.
30. Quantification of the Incorporation Coefficient of a Reactive Gas on a Metallic Film during Magnetron Sputtering: The Method and Results10.1016/j.tsf.2009.07.190 ↗