Improvement of Ferroelectricity in Ce-Doped Hf0.5Zr0.5O2 Thin Films
Source abstract
Abstract
At present, ion doping is a popular method typically used to regulate the ferroelectric properties of Hf0.5Zr0.5O2 films. In this work, Ce (cerium)–doped Hf0.5Zr0.5O2 (Ce: HZO) films on Pt/TiN/SiO2/Si substrates were prepared by the chemical solution deposition (CSD) method. The microstructure and ferroelectric properties of the Ce–doped HZO films were investigated in detail. The experimental results showed that the remanent polarization value of the films with cerium doping concentration of 7 mol% reached 17 μC/cm2, which is a significant improvement compared with the undoped Hf0.5Zr0.5O2 films. The reason for this may be the introduction of cerium ions, which can introduce a certain number of oxygen vacancies, thus stabilizing the formation of the orthogonal phase. Interestingly, the films were shown to be nearly fatigue free after 109 cycles of testing. These results demonstrate that cerium ion doping is an effective method for stabilizing the formation of the orthogonal phase of HZO films, and improving the ferroelectricity of HZO thin films.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Ferroelectric and Negative Capacitance Devices · MXene and MAX Phase Materials · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Key Laboratory of Key Film Materials & Application for Equipments (Hunan Province), School of Material Sciences and Engineering, Xiangtan University, Xiangtan 411105, China
Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Material Sciences and Engineering, Xiangtan University, Xiangtan 411105, China
Funding
National Major R & D Project · National Natural Science Foundation of China · technology innovation leading plan (Science and technology tackling) project of Hunan Provincial new and high-tech industry · State Key Laboratory of Intense Pulsed Radiation Simulation and Effect (North west Institute of Nuclear Technology) · Foundation of Innovation Center of Radiation Application · Key Laboratory of Low Dimensional Materials & Application Technology of Ministry of Education (Xiangtan University)
References (44)
Show source-provided references
1. Origin of indium diffusion in high-k oxide HfO210.1021/acsami.6b01068 ↗
2. Structural and electrical characteristics of RF-sputtered HfO2 high-k based MOS capacitors10.1016/j.sse.2011.04.009 ↗
3. Ferroelectricity in hafnium oxide thin films10.1063/1.3634052 ↗
4. The future of ferroelectric field-effect transistor technology10.1038/s41928-020-00492-7 ↗
5. Review and perspective on ferroelectric HfO2-based thin films for memory applications10.1557/mrc.2018.175 ↗
6. Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties10.1063/1.4747209 ↗
7. Incipient ferroelectricity in Al-doped HfO2 thin films10.1002/adfm.201103119 ↗
8. Electron transport across ultrathin ferroelectric Hf0.5Zr0.5O2 films on Si10.1016/j.mee.2017.05.028 ↗
9. Chemical solution deposition of ferroelectric Sr: HfO2 film from inorganic salt precursors10.1016/j.jallcom.2017.09.264 ↗
10. Uniform crystal formation and electrical variability reduction in hafnium-oxide-based ferroelectric memory by thermal engineering10.1021/acsaelm.0c00610 ↗
11. Chemical solution deposition of ferroelectric hafnium oxide for future lead free ferroelectric devices10.1149/2.0061512jss ↗
12. Ferroelectricity in Lu doped HfO2 layers10.1063/1.4998336 ↗
13. Lanthanum doping induced structural changes and their implications on ferroelectric properties of Hf1-xZrxO2 thin film10.1063/5.0021007 ↗
14. Impact of different dopants on the switching properties of ferroelectric hafniumoxide10.7567/JJAP.53.08LE02 ↗
15. Study on the effect of heat treatment conditions on metalorganic-chemical-vapor-deposited ferroelectric Hf0.5Zr0.5O2 thin film on Ir electrode10.7567/JJAP.53.09PA04 ↗
16. Excellent HZO ferroelectric thin films on flexible PET substrate10.1016/j.jallcom.2022.165872 ↗
17. Influence of annealing temperature on the structural and electrical properties of Si-doped ferroelectric hafnium oxide10.1021/acsaelm.1c00590 ↗
18. Ali, T., Olivo, R., Kerdilès, S., Lehninger, D., Lederer, M., Sourav, D., Royet, A.-S., Sünbül, A., Prabhu, A., and Kühnel, K. (2022, January 15–18). Study of nanosecond laser annealing on silicon doped hafnium oxide film crystallization and capacitor reliability. Proceedings of the 2022 IEEE International Memory Workshop (IMW), Dresden, Germany.10.1109/IMW52921.2022.9779281 ↗
19. Enhanced ferroelectric polarization with less wake-up effect and improved endurance of Hf0.5Zr0.5O2 thin films by implementing W electrode10.1016/j.jmst.2021.07.016 ↗
20. Thermal stability of antiferroelectric-like Al: HfO2 thin films with TiN or Pt electrodes10.1063/5.0083656 ↗
21. Orientation control and domain structure analysis of {100}-oriented epitaxial ferroelectric orthorhombic HfO2-based thin films10.1063/1.4945029 ↗
22. Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping10.1063/1.5050700 ↗
23. Impact of annealing environment on electrical properties of yttrium-doped hafnium zirconium dioxide thin films prepared by the solution process10.35848/1347-4065/aba50b ↗
24. Improvement of ferroelectricity and endurance in Sr doped Hf0.5Zr0.5O2 films10.1016/j.jallcom.2022.165301 ↗
25. Crystallization behavior and ferroelectric property of HfO2-ZrO2 films fabricated by chemical solution deposition10.7567/JJAP.57.11UF06 ↗
26. Impact of Four-Valent Doping on the Crystallographic Phase Formation for Ferroelectric HfO2 from First-Principles: Implications for Ferroelectric Memory and Energy-Related Applications10.1021/acsanm.7b00124 ↗
27. Improvement of remanent polarization of CeO2-HfO2 solid solution thin films on Si substrates by chemical solution deposition10.1063/5.0028200 ↗
28. Structural and ferroelectric properties of Pr doped HfO2 thin films fabricated by chemical solution method10.1007/s10854-019-00874-4 ↗
29. Impact of Wet Annealing on Ferroelectric Phase Formation and Phase Transition of HfO2-ZrO2 System10.1021/acsaelm.1c00171 ↗
30. Optimizing the piezoelectric strain in ZrO2 and HfO2-Based incipient ferroelectrics for thin-film applications: An ab initio dopant screening study10.1021/acsami.0c08310 ↗
31. Solution processed hafnium oxide as a gate insulator for low-voltage oxide thin-film transistors10.1039/c2jm33054g ↗
32. Switching behavior in rare-earth films fabricated in full room temperature10.1109/TED.2012.2182676 ↗
33. Ferroelectric yttrium doped hafnium oxide films from all-inorganic aqueous precursor solution10.1016/j.ceramint.2018.04.233 ↗
34. Impact of oxygen vacancy on the ferroelectric properties of lanthanum-doped hafnium oxide10.1063/5.0023554 ↗
35. Compositional dependence of crystallization temperatures and phase evolution in hafnia-zirconia (Hf1-XZrX) O2 thin films10.1063/5.0002835 ↗
36. Performance improvement of Hf0.5 Zr0.5O2-based ferroelectric-field-effect transistors with ZrO2 seed layers10.1109/LED.2019.2903641 ↗
37. Stabilizing the ferroelectric phase in doped hafnium oxide10.1063/1.4927805 ↗
38. Surface-roughness effect on capacitance and leakage current of an insulating film10.1103/PhysRevB.60.9157 ↗
39. Phase-exchange-driven wake-up and fatigue in ferroelectric hafnium zirconium oxide films10.1021/acsami.0c03570 ↗
40. Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide10.1063/1.4940370 ↗
41. Improved polarization and endurance in ferroelectric Hf0.5Zr0.5O2 films on SrTiO3 (110)10.1039/D1NR06983G ↗
42. Ferroelectric Hf0.5Zr0.5O2 thin films: A review of recent advances10.1007/s11837-018-3140-5 ↗
43. High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5 O2 films10.1039/D0NR02204G ↗
44. An extensive study of the influence of dopants on the ferroelectric properties of HfO210.1039/C6TC04807B ↗