Structural, Morphologic, and Ferroelectric Properties of PZT Films Deposited through Layer-by-Layer Reactive DC Magnetron Sputtering
Source abstract
Abstract
Lead zirconate titanate (PZT) is a widely used material with applications ranging from piezoelectric sensors to developing non-volatile memory devices. Pb(ZrxTi1−x)O3 films were deposited by DC reactive magnetron sputtering at a temperature range of (500–600) °C. X-ray diffraction (XRD) indicated the perovskite phase formation in samples synthesized at 550 °C, which agrees with Raman data analysis. Scanning electron microscopy (SEM) measurements supplemented XRD data and showed the formation of dense PZT microstructures. Further X-ray photoelectron spectroscopy (XPS) analysis confirmed that the Zr/Ti ratio corresponds to the Pb(Zr0.58Ti0.42)O3 content. Dielectric measurement of the same sample indicated dielectric permittivity to be around 150 at room temperature, possibly due to the defects in the structure. P-E measurements show ferroelectric behavior at a temperature range of (50–180) °C. It was found that the remnant polarization increased with temperature, and at the same time, coercive field values decreased. Such behavior can be attributed to energetically deep defects.
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Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Acoustic Wave Resonator Technologies · Microwave Dielectric Ceramics Synthesis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics, Kaunas University of Technology, Studentų Str. 50, LT-51368 Kaunas, Lithuania
Institute of Materials Science, Kaunas University of Technology, K. Baršausko Str. 59, LT-51423 Kaunas, Lithuania
Faculty of Physics, Vilnius University, Sauletekio al. 9, LT-10222 Vilnius, Lithuania
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