Transparent Amorphous Oxide Semiconductor as Excellent Thermoelectric Materials
Source abstract
Abstract
It is demonstrated that transparent amorphous oxide semiconductors (TAOS) can be excellent thermoelectric (TE) materials, since their thermal conductivity (κ) through a randomly disordered structure is quite low, while their electrical conductivity and carrier mobility (μ) are high, compared to crystalline semiconductors through the first-principles calculations and the various measurements for the amorphous In−Zn−O (a-IZO) thin film. The calculated phonon dispersion in a-IZO shows non-linear phonon instability, which can prevent the transport of phonon. The a-IZO was estimated to have poor κ and high electrical conductivity compared to crystalline In2O3:Sn (c-ITO). These properties show that the TAOS can be an excellent thin-film transparent TE material. It is suggested that the TAOS can be employed to mitigate the heating problem in transparent display devices.
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Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Transition Metal Oxide Nanomaterials · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering, Pusan National University, Busan 46241, Korea
Department of Physics, Pusan National University, Busan 46241, Korea
Department of Electrochemisty, Korea Institute of Materials Science, Changwon 51508, Korea
Korea Research Institute of Standards and Science, Daejeon 34113, Korea
Department of Physics Education, Pusan National University, Busan 46241, Korea
Funding
National Research Foundation of Korea
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