Effect of Substrate Temperature on the Optical and Electrical Properties of Nitrogen-Doped NiO Thin Films
Source abstract
Abstract
NiO is a widely used p-type semiconductor. The desired optical and electrical properties of NiO vary in different application fields. To modulate the properties of NiO, nitrogen (N)-doped NiO thin films were synthesized by reactive radio-frequency magnetron sputtering on ITO-coated glass substrates. The influence of substrate temperature on the properties of NiO was investigated. XRD studies indicated a cubic structure. With the increase of the substrate temperature, the average transmittance in the visible region gradually reduced from 90% to 50%. The bandgap energy narrowed from 3.5 to 3.08 eV. The intensity of the PL spectra weakened, and the electrical conductivity rose. Overall, changing the substrate temperature is an effective method to modulate the optical and electrical properties of N-doped NiO thin films.
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Research context
OpenAlex topics: Transition Metal Oxide Nanomaterials · ZnO doping and properties · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Key Lab of Advanced Transducers and Intelligent Control System, Ministry of Education and Shanxi Province, Taiyuan University of Technology, Taiyuan 030024, China
College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, China
First Design and Research Institute, China Wuzhou Engineering Group Corporation LTD, Beijing 100053, China
Funding
National Natural Science Foundation of China · Natural Science Foundation of Shanxi Province
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