Non-Polar Gallium Nitride for Photodetection Applications: A Systematic Review
Source abstract
Abstract
Ultraviolet photodetectors have been widely utilized in several applications, such as advanced communication, ozone sensing, air purification, flame detection, etc. Gallium nitride and its compound semiconductors have been promising candidates in photodetection applications. Unlike polar gallium nitride-based optoelectronics, non-polar gallium nitride-based optoelectronics have gained huge attention due to the piezoelectric and spontaneous polarization effect–induced quantum confined-stark effect being eliminated. In turn, non-polar gallium nitride-based photodetectors portray higher efficiency and faster response compared to the polar growth direction. To date, however, a systematic literature review of non-polar gallium nitride-based photodetectors has yet to be demonstrated. Hence, the objective of this systematic literature review is to critically analyze the data related to non-polar gallium nitride-based photodetectors. Based on the pool of literature, three categories are introduced, namely, growth and fabrication, electrical properties, and structural, morphological, and optical properties. In addition, bibliometric analysis, a precise open-source tool, was used to conduct a comprehensive science mapping analysis of non-polar gallium nitride-based photodetectors. Finally, challenges, motivations, and future opportunities of non-polar gallium nitride-based photodetectors are presented. The future opportunities of non-polar GaN-based photodetectors in terms of growth conditions, fabrication, and characterization are also presented. This systematic literature review can provide initial reading material for researchers and industries working on non-polar gallium nitride-based photodetectors.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · Semiconductor Quantum Structures and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics, Faculty of Science and Mathematics, Universiti Pendidikan Sultan Idris, Tanjung Malim 35900, Perak, Malaysia
Low Dimensional Materials Research Centre, Department of Physics, Faculty of Science, Universiti Malaya, Kuala Lumpur 50603, Malaysia
Microelectronic and Nanotechnology Shamsuddin Research Centre (MiNT-SRC), Faculty of Electrical and Electronic Engineering, Universiti Tun Hussein Onn Malaysia, Batu Pahat 86400, Johor, Malaysia
Department of Medical Instrumentation Engineering, Alsalam University College, Baghdad 10047, Iraq
Department of Medical Instrumentation Engineering, Ashur University College, Baghdad 10047, Iraq
Department of Physics, College of Sciences, University of Baghdad, Baghdad 10047, Iraq
Queensland Micro- and Nanotechnology Centre, Griffith University, 170 Kessels Road, Nathan, QLD 4111, Australia
Funding
Collaborative Research in Engineering, Science & Technology (CREST), Penang, Malaysia · Strategic Research Fund (SRF) by Malaysian Ministry of Science,
References (100+)
Show source-provided references
1. Impact of crystallinity towards the performance of semi-polar (11–22) GaN UV photodetector10.1016/j.matlet.2020.129244 ↗
2. The optimization of n-type and p-type m-plane GaN grown on m-plane sapphire substrate by metal organic chemical vapor deposition10.1016/j.mssp.2021.105836 ↗
3. Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN10.1038/s41598-021-89201-8 ↗
4. Boosted ultraviolet electroluminescence of InGaN/AlGaN quantum structures grown on high-index contrast patterned sapphire with silica array10.1016/j.nanoen.2019.104427 ↗
5. Highly efficient GaN-based high-power flip-chip light-emitting diodes10.1364/OE.27.00A669 ↗
6. Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes10.1063/5.0043240 ↗
7. Fabrication of non-polar GaN based highly responsive and fast UV photodetector10.1063/1.4978427 ↗
8. Broadband ultraviolet photodetector based on vertical Ga2O3/GaN nanowire array with high responsivity10.1002/adom.201801563 ↗
9. Nonpolar (11–20) GaN Metal-Semiconductor-Metal Photodetectors with Superior Performance on Silicon10.1021/acsami.0c04890 ↗
10. A nanocomposite ultraviolet photodetector based on interfacial trap-controlled charge injection10.1038/nnano.2012.187 ↗
11. Effects of clouds and stratospheric ozone depletion on ultraviolet radiation trends10.1038/377710a0 ↗
12. Recent advances in ultraviolet photodetectors10.1016/j.mssp.2014.02.054 ↗
13. Ultraviolet-B-mediated induction of protein-protein interactions in mammalian cells10.1038/ncomms2800 ↗
14. A comprehensive review of semiconductor ultraviolet photodetectors: From thin film to one-dimensional nanostructures10.3390/s130810482 ↗
15. Comparative study of silicon-based ultraviolet photodetectors10.1109/JSEN.2012.2192103 ↗
16. III nitrides and UV detection10.1088/0953-8984/13/32/316 ↗
17. Highly Responsive, Self-Powered a-GaN Based UV-A Photodetectors Driven by Unintentional Asymmetrical Electrodes10.1021/acsaelm.9b00834 ↗
18. Ultra-High and Fast Ultraviolet Response Photodetectors Based on Lateral Porous GaN/Ag Nanowires Composite Nanostructure10.1002/adom.201902162 ↗
19. Photodetection Properties of Nonpolar a-Plane GaN Grown by Three Approaches Using Plasma-Assisted Molecular Beam Epitaxy10.1002/pssa.201900171 ↗
20. Surface-Engineered Nanostructure-Based Efficient Nonpolar GaN Ultraviolet Photodetectors10.1021/acsomega.7b02024 ↗
21. Trap modulated photoresponse of InGaN/Si isotype heterojunction at zero-bias10.1063/1.4926480 ↗
22. Double Gaussian distribution of barrier heights and self-powered infrared photoresponse of InN/AlN/Si (111) heterostructure10.1063/1.5100066 ↗
23. In-Plane Anisotropic Photoconduction in Nonpolar Epitaxial a-Plane GaN10.1021/acsami.8b05032 ↗
24. High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers10.1063/1.106819 ↗
25. Shetty, A., Sundar, K.J., Roul, B., Mukundan, S., Chandan, G., Mohan, L., Ghosh, A., Vinoy, K., and Krupanidhi, S. (2014, January 3–6). Plasmonic enhancement of photocurrent in GaN based UV photodetectors. Proceedings of the 2014 IEEE 2nd International Conference on Emerging Electronics (ICEE), Bengaluru, India.10.1109/ICEmElec.2014.7151138 ↗
26. Influence of threading dislocations on GaN-based metal-semiconductor-metal ultraviolet photodetectors10.1063/1.3536480 ↗
27. High Responsivity and Wavelength Selectivity of GaN-Based Resonant Cavity Photodiodes10.1002/adom.201901276 ↗
28. Effect of low NH 3 flux towards high quality semi-polar (11–22) GaN on m-plane sapphire via MOCVD10.1016/j.spmi.2018.03.038 ↗
29. Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices10.1088/0268-1242/27/2/024001 ↗
30. Enhanced UV detection by non-polar epitaxial GaN films10.1063/1.4937742 ↗
31. Defect effect on the performance of nonpolar GaN-based ultraviolet photodetectors10.1063/5.0040110 ↗
32. Nonpolar p-GaN/n-Si heterojunction diode characteristics: A comparison between ensemble and single nanowire devices10.1088/0022-3727/48/39/395102 ↗
33. Semipolar and nonpolar GaN epi-films grown on m-sapphire by plasma assisted molecular beam epitaxy10.1063/1.4902892 ↗
34. High-performance nonpolar a-plane GaN-based metal–semiconductor–metal UV photo-detectors fabricated on LaAlO 3 substrates10.1039/C7TC05534J ↗
35. Magnesium doped semipolar (11–22) p-type gallium nitride: Impact of dopant concentration variants towards grain size distributions and crystalline quality
36. Structural and optical properties of nonpolar (11−20) a-plane GaN grown on (1−102) r-plane sapphire substrate by plasma-assisted molecular beam epitaxy10.1016/j.scriptamat.2011.03.017 ↗
37. Effect of ammonia/gallium ratio and growth temperature towards the surface morphology of semi-polar GaN grown on m-plane sapphire via MOCVD
38. Ren, B., Liao, M., Sumiya, M., Huang, J., Wang, L., Koide, Y., and Sang, L. (2019). Vertical-type Ni/GaN UV photodetectors fabricated on free-standing GaN substrates. Appl. Sci., 9.10.3390/app9142895 ↗
39. GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity10.1007/s10854-018-8917-3 ↗
40. High spectral response of self-driven GaN-based detectors by controlling the contact barrier height10.1038/srep16819 ↗
41. Crystal quality and surface structure tuning of semi-polar (11–22) GaN on m-plane sapphire via in-situ multiple ammonia treatment10.1016/j.tsf.2020.137817 ↗
42. Ultrasonic-assisted production of zero-valent iron-decorated graphene oxide/activated carbon nanocomposites: Chemical transformation and structural evolution10.1016/j.msec.2020.111362 ↗
43. Non-polar GaN/AlGaN quantum-well polariton laser at room temperature10.1103/PhysRevB.104.125311 ↗
44. Gallium Nitride–Based Photodiode: A review10.1016/j.matpr.2020.12.729 ↗
45. Omnès, F., Monroy, E., Muñoz, E., and Reverchon, J.-L. (2007, January 8). Wide bandgap UV photodetectors: A short review of devices and applications. Proceedings of the Gallium Nitride Materials and Devices II, San Jose, CA, USA.10.1117/12.705393 ↗
46. Sentiment analysis and its applications in fighting COVID-19 and infectious diseases: A systematic review10.1016/j.eswa.2020.114155 ↗
47. Toward a definition of “bibliometrics”10.1007/BF02016680 ↗
48. Diodato, V.P., and Gellatly, P. (2013). Dictionary of Bibliometrics, Routledge.10.4324/9780203714133 ↗
49. Bibliometrix: An R-tool for comprehensive science mapping analysis10.1016/j.joi.2017.08.007 ↗
50. Bibliometric Analysis of the Research Progress on Graphene Inks from 2008 to 2018
51. Transparent Antenna for Green Communication Feature (Taxonomy Analysis, Open Challenges, Motivations, Future Directions and Recommendations): A Systematic Review10.1109/ACCESS.2020.3044435 ↗
52. Systematic review of artificial intelligence techniques in the detection and classification of COVID-19 medical images in terms of evaluation and benchmarking: Taxonomy analysis, challenges, future solutions and methodological aspects10.1016/j.jiph.2020.06.028 ↗
53. High indium non-polar InGaN clusters with infrared sensitivity grown by PAMBE10.1063/1.4914842 ↗
54. Wafer-scale synthesis of a uniform film of few-layer MoS2 on GaN for 2D heterojunction ultraviolet photodetector10.1088/1361-6463/aad4e8 ↗
55. Comprehensive analyses of core-shell InGaN/GaN single nanowire photodiodes10.1088/1361-6463/aa935d ↗
56. Controlled epitaxial growth of GaN nanostructures on sapphire (11–20) using laser molecular beam epitaxy for photodetector applications10.1016/j.mssp.2020.105631 ↗
57. Improved photoresponse of a-axis GaN microwire/p-polymer hybrid photosensor by the piezo-phototronic effect10.1016/j.nanoen.2017.01.032 ↗
58. Ultrahigh UV responsivity of single nonpolar a-axial GaN nanowire with asymmetric piezopotential via piezo-phototronic effect: Dependence of carrier screening effect on strain10.1016/j.nanoen.2017.02.052 ↗
59. Self-powered solar-blind photodetector with fast response based on Au/β-Ga2O3 nanowires array film Schottky junction10.1021/acsami.5b11956 ↗
60. Numerical modeling of the transient response of metal-semiconductor-metal photodetector using discrete Fourier transform method10.1088/1742-6596/286/1/012035 ↗
61. Jones, A.C., and Hitchman, M.L. (2009). Chemical Vapour Deposition: Precursors, Processes and Applications, RSC Publishing.10.1039/9781847558794 ↗
62. A Self-Powered High-Performance UV Photodetector Based on Core–Shell GaN/MoO3−x Nanorod Array Heterojunction10.1002/adom.202000197 ↗
63. Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology10.1016/j.tsf.2018.09.052 ↗
64. The effects of film surface roughness on x-ray diffraction of nonpolar gallium nitride films10.1088/0022-3727/42/13/135407 ↗
65. Positioning of periodic AlN/GaN multilayers: Effect on crystalline quality of a-plane GaN10.1016/j.mssp.2019.104700 ↗
66. Defect reduction in nonpolar a-plane GaN films using in situ Si N x nanomask10.1063/1.2234841 ↗
67. Anisotropically biaxial strain in non-polar (112–0) plane InxGa1−x N/GaN layers investigated by X-ray reciprocal space mapping10.1038/s41598-017-04854-8 ↗
68. Distorted wurtzite unit cells: Determination of lattice parameters of nonpolar a-plane AlGaN and estimation of solid phase Al content10.1063/1.3525602 ↗
69. Comparative study on MOCVD growth of a-plane GaN films on r-plane sapphire substrates using GaN, AlGaN, and AlN buffer layers10.1007/s11664-009-0847-7 ↗
70. Probing the correlation between structure, carrier dynamics and defect states of epitaxial GaN film on (11–20) sapphire grown by rf-molecular beam epitaxy10.1039/C5RA10099B ↗
71. Luminescence properties of defects in GaN10.1063/1.1868059 ↗
72. Ding, K., Avrutin, V., Izyumskaya, N., Metzner, S., Bertram, F., Christen, J., Ozgur, U., and Morkoc, H. (2018, January 23). Recent progress in nonpolar and semi-polar GaN light emitters on patterned Si substrates. Proceedings of the Gallium Nitride Materials and Devices XIII, San Francisco, CA, USA.10.1117/12.2291281 ↗
73. Localized tip enhanced Raman spectroscopic study of impurity incorporated single GaN nanowire in the sub-diffraction limit10.1063/1.4931730 ↗
74. Temperature dependence of the energy gap in semiconductors10.1016/0031-8914(67)90062-6 ↗
75. Anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using double AlN buffer layers10.1038/srep20787 ↗
76. MOCVD growth and optical properties of non-polar (1 1–2 0) a-plane GaN on (1 0–1 2) r-plane sapphire substrate10.1016/j.jcrysgro.2010.08.052 ↗
77. Effect of controlled growth dynamics on the microstructure of nonpolar a-plane GaN revealed by X-ray diffraction10.1143/JJAP.48.071002 ↗
78. Defect-related anisotropic surface micro-structures of nonpolar a-plane GaN epitaxial films10.1039/C7CE02121F ↗
79. Capillary equilibria of dislocated crystals10.1107/S0365110X51001690 ↗
80. X-ray diffraction of III-nitrides10.1088/0034-4885/72/3/036502 ↗
81. Bibliometric Analysis in the Field of Quantum Technology10.3390/quantum3030036 ↗
82. Espadinha-Cruz, P., Godina, R., and Rodrigues, E.M. (2021). A review of data mining applications in semiconductor manufacturing. Processes, 9.10.3390/pr9020305 ↗
83. Surface acoustic wave-based ultraviolet photodetectors: A review10.1016/j.scib.2019.12.001 ↗
84. Software tools for conducting bibliometric analysis in science: An up-to-date review
85. Recent progress in group III-nitride nanostructures: From materials to applications10.1016/j.mser.2020.100578 ↗
86. Nonpolar m-plane GaN on patterned Si (112) substrates by metalorganic chemical vapor deposition10.1063/1.3225157 ↗
87. Wafer-scale fabrication of high-purity reduced graphene oxide films as ultrahigh-frequency capacitors with minimal self-discharge10.1016/j.cej.2020.124560 ↗
88. Self-powered UV photodetector based on heterostructured TiO2 nanowire arrays and polyaniline nanoflower arrays10.1016/j.synthmet.2014.12.030 ↗
89. High-performance, self-powered photodetectors based on perovskite and graphene10.1021/acsami.7b14110 ↗
90. High-performance of self-powered UV photodetector with long-term stability based on ZnO nanorods and an iodine-free quasi solid-state electrolyte10.1039/C7RA04966H ↗
91. Self-powered near-infrared photodetector based on asymmetrical Schottky interdigital contacts10.1109/LED.2015.2478395 ↗
92. Tuning the properties of a self-powered UV photodetector based on ZnO and poly(3,4-ethylenedioxythiophene): Poly(styrenesulfonate) by hydrogen annealing of ZnO nanorod arrays10.1016/j.tsf.2017.03.017 ↗
93. Highly wavelength-selective enhancement of responsivity in Ag nanoparticle-modified ZnO UV photodetector10.1021/acsami.6b14430 ↗
94. High spectrum selectivity ultraviolet photodetector fabricated from an n-ZnO/p-GaN heterojunction10.1021/jp808870z ↗
95. Ultrahigh photocurrent gain in m-axial GaN nanowires10.1063/1.2817595 ↗
96. Embedded AlN/GaN multi-layer for enhanced crystal quality and surface morphology of semi-polar (11–22) GaN on m-plane sapphire10.1016/j.mssp.2018.06.014 ↗
97. Disilane Doping of Semi-Polar (11–22) n-GaN: The Impact of Terrace-Like Evolution toward the Enhancement of the Electrical Properties10.1016/j.tsf.2020.138489 ↗
98. Reducing the grain density in semipolar (11–22) AlGaN surfaces on m-plane sapphire substrates10.7567/1347-4065/ab124d ↗
99. Impact of a Strained Periodic Multilayer on the Surface and Crystal Quality of a Semipolar (11–22) GaN Template10.1021/acs.cgd.9b00206 ↗
100. Growth of Semi-Polar (112¯ 2) GaN on m-plane Sapphire via In-Situ Multiple Ammonia Treatment (I-SMAT) Method10.1016/j.vacuum.2020.109208 ↗