Review of CdTe1−xSex Thin Films in Solar Cell Applications
Source abstract
Abstract
Recent improvements in CdTe thin film solar cells have been achieved by using CdTe1−xSex as a part of the absorber layer. This review summarizes the published literature concerning the material properties of CdTe1−xSex and its application in current thin film CdTe photovoltaics. One of the important properties of CdTe1−xSex is its band gap bowing, which facilitates a lowering of the CdTe band gap towards the optimum band gap for highest theoretical efficiency. In practice, a CdTe1−xSex gradient is introduced to the front of CdTe, which induces a band gap gradient and allows for the fabrication of solar cells with enhanced short-circuit current while maintaining a high open-circuit voltage. In some device structures, the addition of CdTe1−xSex also allows for a reduction in CdS thickness or its complete elimination, reducing parasitic absorption of low wavelength photons.
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Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Laboratory for Thin Films and Photovoltaics, Empa - Swiss Federal Laboratories for Materials Science and Technology, Ueberlandstrasse 129, 8600 Duebendorf, Switzerland
Funding
Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung
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