Spectroscopic Analysis of NF3 Plasmas with Oxygen Additive for PECVD Chamber Cleaning
Source abstract
Abstract
As semiconductors’ device fabrication is highly integrated, the number of the deposition processes is continuously increasing, and the chamber cleaning process becomes essential for deposition equipment to maintain a normal chamber condition. Although the use of NF3 gas for the chamber cleaning is common, it causes several environmental and safety issues. However, not much research has been performed on NF3 plasma at high pressures, such as in cleaning processes. To understand fluorine in NF3, herein, oxygen was added to N2 and NF3 plasma and then compared. Plasma emission spectra were compared using an OES data, and their analyses were performed via a line-ratio method employing the collisional-radiative model. As a result confirmed that the changes in electron temperature, electron density, and chemical species in the plasma could be explained. Additionally, the characteristics of NF3 plasmas with respect to fluorine were confirmed by comparing the oxygenated N2 plasma and the NF3 plasma.
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Research context
OpenAlex topics: Plasma Diagnostics and Applications · Laser-induced spectroscopy and plasma · Metal and Thin Film Mechanics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electronics Engineering, Myongji University, Yongin 17058, Republic of Korea
Funding
Korea Institute of Fusion Energy (KFE)
References (42)
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1. Kim, H., Ahn, S.-J., Shin, Y.G., Lee, K., and Jung, E. (2017, January 14–17). Evolution of NAND Flash Memory: From 2D to 3D as a Storage Market Leader. Proceedings of the 2017 IEEE International Memory Workshop (IMW), Monterery, CA, USA.10.1109/IMW.2017.7939081 ↗
2. Deep Neural Network Modeling of Multiple Oxide/Nitride Deposited Dielectric Films for 3D-NAND Flash10.5757/ASCT.2020.29.6.190 ↗
3. Study of the NF3 Plasma Cleaning of Reactors for Amorphous Silicon Deposition10.1116/1.578854 ↗
4. Ion Energy Distributions and Optical Emission Spectra in NF3-based Process Chamber Cleaning Plasmas10.1116/1.1379794 ↗
5. Low Global Warming Potential Alternative Gases for Plasma Chamber Cleaning10.1166/sam.2016.2885 ↗
6. Plasma Enhanced Chemical Vapor Deposition: Differences between Direct and Remote Plasma Excitation10.1116/1.574963 ↗
7. Chen, X., Holber, W., Loomis, P., Sevillano, E., and Shao, S.Q. (2003). Advances in Remote Plasma Sources for Cleaning 300 mm and Flat Panel CVD Systems. Semicond. Mag.
8. Thin Layer Etching of Silicon Nitride: A Comprehensive Study of Selective Removal Using NH3/NF3 Remote Plasma10.1116/1.4963072 ↗
9. Role of NO in highly selective SiN/SiO2 and SiN/Si etching with NF3 /O2 remote plasma: Experiment and simulation10.1116/1.5004546 ↗
10. Downstream Etching of Silicon Nitride Using Continuous-wave and Pulsed Remote Plasma Sources Sustained in Ar/NF3/O2 Mixtures10.1116/1.5019673 ↗
11. Highly Selective Si3N4/SiO2 Etching Using an NF3/N2/O2/H2 Remote Plasma. I. Plasma Source and Critical Fluxes10.1116/1.5125568 ↗
12. Highly Selective Si3N4/SiO2 Etching Using an NF3/N2/O2/H2 Remote Plasma. II. Surface Reaction Mechanism10.1116/1.5125569 ↗
13. Song, J., Kim, J., Oh, S., and Yun, J. (2019). Contamination Particles and Plasma Etching Behavior of Atmospheric Plasma Sprayed Y2O3 and YF3 Coatings under NF3 Plasma. Coatings, 9.10.3390/coatings9020102 ↗
14. Ootomo, M., Takahashi, K., Hidaka, N., and Kugimoto, H. (2019). Corrosion-Resistant Member, Member for Electrostatic Chuck, and Process for Producing Corrosion-Ressitant Member. (10 497 599 B2), U.S. Patent.
15. Song, J., Choi, E., Oh, S.G., Kim, J.T., and Yun, J. (2019). Contamination Particle Behavior of Aerosol Deposited Y2O3 and YF3 Coatings under NF3 Plasma. Coatings, 9.10.3390/coatings9050310 ↗
16. Microstructure and Plasma Corrosion Behavior of Yttria Coatings Prepared by the Aerosol Deposition Method10.1111/jace.17193 ↗
17. Study on CF4/O2 Plasma Resistance of O-ring Elastomer Materials10.1116/1.5124533 ↗
18. Fluorine-based Plasmas: Main Features and Application in Micro-and Nanotechnology and in Surface Treatment10.1016/j.crci.2018.01.009 ↗
19. Fluorinated Gases for Semiconductor Manufacture: Process Advances in Chemical Vapor Deposition Chamber Cleaning10.1016/S0022-1139(03)00101-5 ↗
20. Environmental and Health Risk Analysis of Nitrogen Trifluoride (NF3), a Toxic and Potent Greenhouse Gas10.1016/j.jhazmat.2008.02.023 ↗
21. Remote Microwave Plasma Source for Cleaning Chemical Vapor Deposition Chambers: Technology for Reducing Global Warming Gas Emissions10.1116/1.590580 ↗
22. An In Situ Monitoring Method for PECVD Process Equipment Condition10.1088/2058-6272/aafb2b ↗
23. Kolpaková, A., Kudrna, P., and Tichý, M. (June, January 31). Study of Plasma System by OES (Optical Emission Spectroscopy). Proceedings of the 20th Annual Conference of Doctoral Students, WDS’11 “Week of Doctoral Students”, Prague, Czech Republic.
24. Low-Tempearature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition10.1149/1.2344843 ↗
25. PECVD Chamber Cleaning End Point Detection (EPD) Using Optical Emission Spectroscopy Data10.4313/TEEM.2013.14.5.254 ↗
26. Sensitivity Enhancement of SiO2 Plasma Etching Endpoint Detection Using Modified Gaussian Mixture Model10.1109/TSM.2020.2973818 ↗
27. Investigation of antibacterial and wettability behaviours of plasma-modified PMMA films for application in ophthalmology10.1088/0022-3727/47/8/085401 ↗
28. Monitoring Oxygen Plasma Treatment of Polypropylene With Optical Emission Spectroscopy10.1109/TPS.2011.2123111 ↗
29. Determination of Electron Temperature, Atomic Fluorine Concentration, and Gas Temperature in Inductively Coupled Fluorocarbon/rare Gas Plasmas Using Optical Emission Spectroscopy10.1116/1.1454126 ↗
30. Characterisation of Volume and Surface Dielectric Barrier Discharges in N2-O2 Mixtures Using Optical Emission Spectroscopy10.1002/ppap.201900126 ↗
31. Temporal Evolution of Electron Density and Temperature in Low Pressure Transient Ar/N2 Plasmas Estimated by Optical Emission Spectroscopy10.1088/1361-6595/ab252d ↗
32. Optical and Mass Spectrometric Measurements of Dissociation in Low Frequency, High Density, Remote Source O2/Ar and NF3/Ar Plasmas10.1116/1.5126429 ↗
33. Chung, C.W. (2017). Plasma Electronics, Gyomoon. [2nd ed.].
34. Using OES to determine electron temperature and density in low-pressure nitrogen and argon plasmas10.1088/0963-0252/17/2/024002 ↗
35. Optical Emission Spectroscopy in Low-temperature Plasmas Containing Argon and Nitrogen: Determination of the Electron Temperature and Density by the Line-ratio Method10.1088/0022-3727/43/40/403001 ↗
36. Determining the Electron Temperature and the Electron Density by a Simple Collisional–radiative Model of Argon and Xenon in Low-pressure Discharges10.1088/0022-3727/42/2/025203 ↗
37. Optical Emission Spectroscopy of Ar-N2 Mixture Plasma10.1016/j.jqsrt.2007.02.008 ↗
38. Nitrogen-Plasma Study for Plasma-Assisted MBE Growth of 1.3 μm Laser Diodes10.1016/S0038-1101(02)00382-9 ↗
39. Characteristics of Atmospheric-pressure Non-thermal N2 and N2/O2 Gas Mixture Plasma Jet10.1063/1.4862304 ↗
40. Dissociation and Product Formation in NF3 Radio-frequency Glow Discharges10.1063/1.345443 ↗
41. Effect of Oxygen Concentration on the Spike Formation during Reactive Ion Etching of SiC Using the Mixed Gas Plasma of NF3 and O210.1116/1.2699473 ↗
42. The observation of fluorescence from excited states of NF2 and NF following the photodissociation of NF3 in the 11-30eV range10.1016/S0009-2614(01)00343-8 ↗