Synthesis, Microstructure and Properties of Magnetron Sputtered Lead Zirconate Titanate (PZT) Thin Film Coatings
Source abstract
Abstract
Compared to aluminum nitride (AlN) with simple stoichiometry, lead zirconate titanate thin films (PZT) are the other promising candidate in advanced micro-electro-mechanical system (MEMS) devices due to their excellent piezoelectric and dielectric properties. The fabrication of PZT thin films with a large area is challenging but in urgent demand. Therefore, it is necessary to establish the relationships between synthesis parameters and specific properties. Compared to sol-gel and pulsed laser deposition techniques, this review highlights a magnetron sputtering technique owing to its high feasibility and controllability. In this review, we survey the microstructural characteristics of PZT thin films, as well as synthesis parameters (such as substrate, deposition temperature, gas atmosphere, and annealing temperature, etc.) and functional proper-ties (such as dielectric, piezoelectric, and ferroelectric, etc). The dependence of these influential factors is particularly emphasized in this review, which could provide experimental guidance for researchers to acquire PZT thin films with expected properties by a magnetron sputtering technique.
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Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Acoustic Wave Resonator Technologies · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
References (85)
Show source-provided references
1. Piezoelectric properties of lead zirconate-lead titanate solid-solution ceramics10.1063/1.1721741 ↗
2. Ctibor, P., Pala, Z., Boldyryeva, H., Sedláček, J., and Kmetík, V. (2012). Microstructure and properties of plasma sprayed lead zirconate titanate (PZT) ceramics. Coatings, 2.10.3390/coatings2020064 ↗
3. Efficient piezoelectric energy harvesters utilizing (001) textured bimorph PZT films on flexible metal foils10.1002/adfm.201601347 ↗
4. Conformable amplified lead zirconate titanate sensors with enhanced piezoelectric response for cutaneous pressure monitoring10.1038/ncomms5496 ↗
5. Recent development in lead-free perovskite piezoelectric bulk materials10.1016/j.pmatsci.2018.06.002 ↗
6. Piezoelectric films for high frequency ultrasonic transducers in biomedical applications10.1016/j.pmatsci.2010.09.001 ↗
7. Wang, X.-B., He, L.-M., Ma, Y.-C., Liu, W.-J., Xu, W.-J., Ren, J.-Y., Riaud, A., and Zhou, J. (2021). Development of broadband high-frequency piezoelectric micromachined ultrasonic transducer array. Sensors, 21.10.3390/s21051823 ↗
8. Review of piezoelectric micromachined ultrasonic transducers and their applications10.1088/1361-6439/aa851b ↗
9. A Photoacoustic imaging device using piezoelectric micromachined ultrasound transducers (PMUTs)10.1109/TUFFC.2019.2956463 ↗
10. Frequency-switchable polarity-inverted BAW resonators based on PZT/PTO epitaxial films using difference in coercive field10.1063/1.5089554 ↗
11. Strongly (001) oriented bimorph PZT film on metal foils grown by RF-sputtering for wrist-worn piezoelectric energy harvesters10.1002/adfm.201801327 ↗
12. PZT thin film deposition techniques, properties and its application in ultrasonic MEMS sensors: A review10.1088/1757-899X/149/1/012190 ↗
13. Growth of {100}-oriented lead zirconate titanate thin films mediated by a safe solvent10.1039/D0TC04066E ↗
14. Advances in the growth and characterization of magnetic, ferroelectric, and multiferroic oxide thin films10.1016/j.mser.2010.03.001 ↗
15. Mechanical properties of highly textured Cu/Ni multilayers10.1016/j.actamat.2010.11.057 ↗
16. Stacking fault and partial dislocation dominated strengthening mechanisms in highly textured Cu/Co multilayers10.1016/j.ijplas.2013.03.005 ↗
17. The effect of coherent interface on strain-rate sensitivity of highly textured Cu/Ni and Cu/V multilayers10.1016/j.scriptamat.2018.10.021 ↗
18. Liu, Y., Song, J., Liu, G.S., Chen, J.S., Wang, C.X., Wang, H.Y., Wang, J., and Zhang, X. (2021). High strength and low coercivity of co-balt with three-dimensional nanoscale stacking faults. Nano Lett., in press.10.1021/acs.nanolett.1c01492 ↗
19. Preparation of PLZT thin films by RF sputtering10.1143/JJAP.15.1163 ↗
20. Ferroelectric PLZT thin films fabricated by RF sputtering10.1143/JJAP.15.1381 ↗
21. Composition of reactively sputtered PLZT films10.1143/JJAP.20.1599 ↗
22. Comparison of the microstructures and ferroelectric characteristics of sputter deposited PZT films with and without lead or lead oxide for compensation10.1016/j.ceramint.2004.06.011 ↗
23. Structure and electrical properties of Pb(Zr, Ti)O3 thin films deposited by reactive sputtering using multi-targets10.1016/0040-6090(95)06609-8 ↗
24. Characterization of Nb-doped Pb(Zr, Ti)O3 films deposited on stainless steel and silicon substrates by RF-magnetron sputtering for MEMS applications10.1016/j.sna.2010.08.019 ↗
25. Polarization orientation in lead zirconate titanate (001) thin films driven by the interface with the substrate10.1103/PhysRevApplied.10.034020 ↗
26. Processing, structure, properties, and applications of PZT thin films10.1080/10408430701707347 ↗
27. Preparation and properties of lead zirconate-titanate thin films10.1143/JJAP.30.2149 ↗
28. Ti and TiOx seeding influence on the orientation and ferroelectric properties of sputtered PZT thin films10.1016/j.sna.2004.01.055 ↗
29. Orientation control of textured PZT thin films sputtered on silicon substrate with TiOx seeding10.1016/S0025-5408(00)00354-8 ↗
30. PZT thin film preparation on Pt-Ti electrode by RF sputtering10.1143/JJAP.30.2152 ↗
31. The Effects of the preparation conditions and heat-treatment conditions of Pt/Ti/SiO2/Si substrates on the nucleation and growth of Pb(Zr, Ti)O3 Films10.1143/JJAP.37.3462 ↗
32. Low-temperature fabrication of Pb(Zr, Ti)O3 films by RF reactive sputtering using Zr/Ti + PbO target10.1143/JJAP.34.5120 ↗
33. Seeding effect of Ti-layer on lead zirconate titanate (PZT) thin films deposited by facing target sputtering10.3131/jvsj.42.577 ↗
34. Growth of (111)-oriented PZT on RuO2 (100)/Pt(111) electrodes by in-situ sputtering10.1016/S0040-6090(98)01420-5 ↗
35. Electrical properties of sputtered PZT films on stabilized platinum electrode10.1016/S0955-2219(99)00008-4 ↗
36. Growth and structural properties of epitaxial Pb(ZrxTi1−x)O3 films and Pb(ZrxTi1−x)O3-cuprate heterostructures10.1063/1.361798 ↗
37. Controlling crystallization of Pb(Zr,Ti)O3 thin films on IrO2 electrodes at low temperature through interface engineering10.1063/1.1544057 ↗
38. Structural, electric and magnetic properties of Pb(Zr0.2, Ti0.8)O3–CoFe2O4 heterostructures10.1016/j.tsf.2013.06.033 ↗
39. Characterization of Pb(Zr, Ti)O3 thin films deposited from multielement metal targets10.1063/1.341822 ↗
40. Effect of Zr/Ti ratio on crystal structure of thin lead zirconate-titanate films prepared by reactive sputtering10.1143/JJAP.32.4048 ↗
41. Some electrical and optical properties of ferroelectric lead-zirconate–lead-titanate thin films10.1063/1.324101 ↗
42. Electrical properties of low-temperature (450 °C) Pb(Zr, Ti)O3 films prepared in Qua-Si-metallic mode by RF reactive sputtering10.1143/JJAP.35.5084 ↗
43. Preparation and characterization of Pb(ZrxTi1−x)O3 thin films by reactive sputtering using an alloy target10.1143/JJAP.32.4122 ↗
44. Electrical properties of lead-zirconate–lead-titanate ferroelectric thin films and their composition analysis by auger electron spectroscopy10.1063/1.325455 ↗
45. Structural and electrical properties of highly oriented Pb(Zr, Ti)O3 thin films deposited by facing target sputtering10.1016/S0924-4247(99)00307-6 ↗
46. Rf planar magnetron sputtering and characterization of ferroelectric Pb(Zr, Ti)O3 films10.1063/1.331895 ↗
47. Ferroelectric properties of PZT thin films prepared by sputtering with stoichiometric single oxide target: Comparison between conventional and rapid thermal annealing10.1016/S0955-2219(97)00031-9 ↗
48. Studying the composition and phase state of thin PZT films obtained by high-frequency magnetron sputtering under variation of working gas pressure10.1134/S1063785019030258 ↗
49. Lead zirconate titanate (PZT) thin film deposition in facing target sputtering10.3131/jvsj.42.257 ↗
50. Characterization of lead zirconate titanate thin films deposited at low temperature by reactive facing target sputtering10.1016/S0040-6090(00)01220-7 ↗
51. Effect of oxygen partial pressure on crystal quality and electrical properties of RF sputtered PZT thin films under the fixed Ar flow and sputtering pressure10.1016/j.vacuum.2019.109041 ↗
52. Highly oriented lead zirconium titanate thin films: Growth, control of texture, and its effect on dielectric properties10.1063/1.1385580 ↗
53. In situ deposition of sputtered PZT films: Control of the growth temperature by the sputtered lead flux10.1016/S0042-207X(99)00204-3 ↗
54. Effect of substrate temperature on the crystallization of Pb(Zr, Ti)O3 films on Pt/Ti/Si substrates prepared by radio frequency magnetron sputtering with a stoichiometric oxide target10.1016/S0921-5107(02)00161-7 ↗
55. Properties of D.C. magnetron-sputtered lead zirconate titanate thin films10.1016/0040-6090(89)90653-6 ↗
56. Electrical and crystallographic properties of sputtered-Pb(Zr, Ti)O3 films treated by rapid thermal annealing10.1143/JJAP.32.4118 ↗
57. Large piezoelectricity on Si from highly (001)-oriented PZT thick films via a CMOS-compatible sputtering/RTP process10.1016/j.mtla.2019.100228 ↗
58. Preferred orientation and ferroelectric properties of lead zirconate titanate thin films10.1016/S0040-6090(00)01231-1 ↗
59. Preparation of Nb doped PZT film by RF sputtering10.1016/j.ssc.2009.07.021 ↗
60. Preparation of perovskite, Pb(Zr, Ti)O3 thin-films on YSZ(111)/Si(111) substrates by post-deposition annealing10.1016/S0040-6090(00)01889-7 ↗
61. PZT thin film preparation by pulsed DC magnetron sputtering10.1016/j.vacuum.2008.09.002 ↗
62. Physical properties of radio-frequency magnetron sputtered Pb(Zr,Ti)O3 thin films: Direct determination of oxygen composition by Rutherford backscattering spectroscopy and nuclear reaction analysis10.1116/1.578645 ↗
63. Sputtering preparation of ferroelectric PLZT thin films and their optical applications10.1109/58.108865 ↗
64. Influence of apparatus geometry and deposition conditions on the structure and topography of thick sput-tered coatings10.1116/1.1312732 ↗
65. Influence of substrate temperature and deposition rate on structure of thick sputtered Cu coatings10.1116/1.568682 ↗
66. Pb(Zr, Ti)O3 thin-film preparation by multitarget magnetron sputtering10.1143/JJAP.31.3021 ↗
67. Preparation and switching kinetics of Pb(Zr, Ti)O3 thin films deposited by reactive sputtering10.1143/JJAP.30.2159 ↗
68. Highly-efficient, flexible piezoelectric PZT thin film nanogenerator on plastic substrates10.1002/adma.201305659 ↗
69. Dielectric, ferroelectric and piezoelectric properties of sputtered PZT thin films on Si substrates: Influence of film thickness and orientation10.15407/spqeo5.01.078 ↗
70. The grain size effect of Pb(Zr010.1016/S0040-6090(01)01745-X ↗
71. Effects of preferred orientation on the piezoelectric properties of Pt/Pb(Zr0.3Ti0.7)O3/Pt thin films grown by sol–gel process10.1007/s10854-008-9735-9 ↗
72. Properties of RF-sputtered PZT Thin Films with Ti/Pt electrodes10.1155/2014/574684 ↗
73. Film-thickness and composition dependence of epitaxial thin-film PZT-based mass-sensors10.1016/j.sna.2013.05.004 ↗
74. Crystallographic contributions to piezoelectric properties in PZT thin films10.1038/s41598-019-43869-1 ↗
75. Piezoelectric properties of rhombohedral P(Zr, Ti)O3 thin films with (100), (111), and ‘‘random’’ crystallographic orientation10.1063/1.126113 ↗
76. Crystal orientation dependence of piezoelectric properties of lead zirconate titanate near the morphotropic phase boundary10.1063/1.121373 ↗
77. Electrical Properties of CSD-derived Pb(Zr,Ti)O3 thin films with different orientations and compositions10.1080/00150190600689449 ↗
78. Effect of grain sizes on piezoelectric properties of multilayer thick film actuators10.1080/00150199908015795 ↗
79. Influence of plasma pressure on the growth characteristics and ferroelectric properties of sputter-deposited PZT thin films10.1016/j.apsusc.2010.03.142 ↗
80. Thin-film ferroelectric materials and their applications10.1038/natrevmats.2016.87 ↗
81. Composition and orientation dependence of electrical properties of epitaxial Pb(ZrxTi1−x)O3 thin films grown using metalorganic chemical vapor deposition10.1063/1.1645646 ↗
82. Local polarization dynamics in ferroelectric materials10.1088/0034-4885/73/5/056502 ↗
83. Single-crystal Pb(ZrxTi1−x)O3 thin films prepared by metal-organic chemical vapor deposition: Systematic compositional variation of electronic and optical properties10.1063/1.364239 ↗
84. Preparation of epitaxial Pb(ZrxTi1−x)O3 thin films and their crystallographic, pyroelectric, and ferroelectric properties10.1063/1.342936 ↗
85. Thickness effects on the pyroelectric properties of chemical-solution-derived Pb(Zr0.3,Ti0.7)O3 thin films for the infra-red sensor devices10.1143/JJAP.42.5956 ↗