Recent Advances in Metal-Oxide Thin-Film Transistors: Flexible/Stretchable Devices, Integrated Circuits, Biosensors, and Neuromorphic Applications
Source abstract
Abstract
Thin-film transistors using metal oxides have been investigated extensively because of their high transparency, large area, and mass production of metal oxide semiconductors. Compatibility with conventional semiconductor processes, such as photolithography of the metal oxide offers the possibility to develop integrated circuits on a larger scale. In addition, combinations with other materials have enabled the development of sensor applications or neuromorphic devices in recent years. Here, this paper provides a timely overview of metal-oxide-based thin-film transistors focusing on emerging applications, including flexible/stretchable devices, integrated circuits, biosensors, and neuromorphic devices. This overview also revisits recent efforts on metal oxide-based thin-film transistors developed with high compatibility for integration to newly reported applications.
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Biomedical Engineering, Gachon University, 191 Hambangmoe-ro, Incheon 21936, Korea
Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam 13120, Korea
Funding
Gachon University
References (100+)
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