Advances in La-Based High-k Dielectrics for MOS Applications
Source abstract
Abstract
This paper reviews the studies on La-based high-k dielectrics for metal-oxide-semiconductor (MOS) applications in recent years. According to the analyses of the physical and chemical characteristics of La2O3, its hygroscopicity and defects (oxygen vacancies, oxygen interstitials, interface states, and grain boundary states) are the main problems for high-performance devices. Reports show that post-deposition treatments (high temperature, laser), nitrogen incorporation and doping by other high-k material are capable of solving these problems. On the other hand, doping La into other high-k oxides can effectively passivate their oxygen vacancies and improve the threshold voltages of relevant MOS devices, thus improving the device performance. Investigations on MOS devices including non-volatile memory, MOS field-effect transistor, thin-film transistor, and novel devices (FinFET and nanowire-based transistor) suggest that La-based high-k dielectrics have high potential to fulfill the high-performance requirements in future MOS applications.
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Research context
OpenAlex topics: Semiconductor materials and devices · Electronic and Structural Properties of Oxides · Ferroelectric and Negative Capacitance Devices
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Affiliations
Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong 999077, China
Bio-inspired Sensors and Optoelectronics Laboratory (BISOL), EECS, Northwestern University, Evanston, IL 60208, USA
Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong 999077, China
Funding
University of Hong Kong
References (100+)
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