Analysis and Characterization of Normally-Off Gallium Nitride High Electron Mobility Transistors
Source abstract
Abstract
High electron mobility transistor (HEMT) based on gallium nitride (GaN) is one of the most promising candidates for the future generation of high frequencies and high-power electronic applications. This research work aims at designing and characterization of enhancement-mode or normally-off GaN HEMT. The impact of variations in gate length, mole concentration, barrier variations and other important design parameters on the performance of normally-off GaN HEMT is thoroughly investigated. An increase in the gate length causes a decrease in the drain current and transconductance, while an increase in drain current and transconductance can be achieved by increasing the concentration of aluminium (Al). For Al mole fractions of 23%, 25%, and 27%, within Al gallium nitride (AlGaN) barrier, the GaN HEMT devices provide a maximum drain current of 347, 408 and 474 mA/μm and a transconductance of 19, 20.2, 21.5 mS/μm, respectively. Whereas, for Al mole fraction of 10% and 15%, within AlGaN buffer, these devices are observed to provide a drain current of 329 and 283 mA/μm, respectively. Furthermore, for a gate length of 2.4, 3.4, and 4.4 μm, the device is observed to exhibit a maximum drain current of 272, 235, and 221 mA/μm and the transconductance of 16.2, 14, and 12.3 mS/μm, respectively. It is established that a maximum drain current of 997 mA/μm can be achieved with an Al concentration of 23%, and the device exhibits a steady drain current with enhanced transconductance. These observations demonstrate tremendous potential for two-dimensional electron gas (2DEG) for securing of the normally-off mode operation. A suitable setting of gate length and other design parameters is critical in preserving the normally-off mode operation while also enhancing the critical performance parameters at the same time. Due to the normally-on depletion-mode nature of GaN HEMT, it is usually not considered as suitable for high power levels, frequencies, and temperature. In such settings, a negative bias is required to enter the blocking condition; however, in the before-mentioned normally-off devices, the negative bias can be avoided and the channel can be depleted without applying a negative bias.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (50)
Show source-provided references
1. Physics and technology of gallium nitride materials for power electronics
2. Emerging trends in wide band gap semicon-ductors (SiC and GaN) technology for power devices10.1016/j.mee.2017.11.021 ↗
3. Energy and Air Pollution: World Energy Outlook Special Report 2016 · 2016
4. Griffith · Proc. IEEE Compound Semiconductor Integrated Circuit Sym. · 2006 · 275
5. Technology and reliability of normally-off GaN HEMTs with p-type gate10.3390/en10020153 ↗
6. Improved RF and DC performance in AlGaN/GaN HEMT by p-type doping in GaN buffer for millimetre-wave applications
7. Evaluations and applications of GaN HEMTs for power electronics
8. A review of GaN HEMT broadband power amplifiers
9. Heterojunction field effect transistors
10. Review of recent progresses on gallium nitride transistor in power conversion application10.1080/14786451.2019.1657866 ↗
11. Novel high performance AlGaN/GaN based enhancement-mode metal-oxide semiconductor high electron mobility transistor10.1002/pssc.201300179 ↗
12. F. D. Garcia, “A physics-based analytical compact model, TCAD simulation, and empirical spice models of GaN devices for power applications,” Masters Theses, University of Tennessee, USA, 2018.
13. Gallium nitride power device modeling using deep feed forward neural networks
14. Evolution of MOS-bipolar power semiconductor technology10.1109/5.4426 ↗
15. Baliga · Fundamentals of Power Semiconductor Devices · 2008 · 440
16. 150 volt vertical channel GaAs FET
17. Gallium nitride devices for power electronic applications10.1088/0268-1242/28/7/074011 ↗
18. Silicon-carbide high voltage (400V) schottky barrier diodes10.1109/55.192814 ↗
19. Jayant · Silicon Carbide Power Devices · 2006 · 482
20. AlGaN/GaN HEMTs-an overview of device operation and applications10.1109/JPROC.2002.1021567 ↗
21. A comprehensive review of recent progress on GaN high electron mobility transistors: Devices, fabrication and reliability10.3390/electronics7120377 ↗
22. Comparision of wide band gap semiconductors for power electronics applications
23. Simulation design of high baliga’s figure of merit normally-off P-GaN gate AlGaN/GaN heterostructure field-effect transistors with junction field plates10.1016/j.spmi.2018.09.005 ↗
24. Merits of gallium nitride based power conversion10.1088/0268-1242/28/7/074013 ↗
25. Recessed-gate structure approach toward normally-off high-voltage AlGaN/GaN HEMT for power electronics applications10.1109/TED.2005.862708 ↗
26. Nearsurface processing on AlGaN/GaN heterostructures: A nanoscale electrical and structural characterization10.1186/1556-276X-6-132 ↗
27. Influence of thermal anneal steps on the current collapse of fluorine treated enhancement mode SiN/AlGaN/GaN HEMTs10.1002/pssc.200880838 ↗
28. Synthesis and characterization of p-type NiO films suitable for normally-off AlGaN/GaN HFETs application10.1016/j.mssp.2017.05.027 ↗
29. Over 100 a operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage10.1016/j.sse.2010.01.001 ↗
30. Fiorenza · IEEE Transactions on Electron Devices · 2017 · 64 · 289310.1109/TED.2017.2699786 ↗
31. Review of technology for normally-off HEMTs with p-GaN gate10.1016/j.mssp.2017.09.027 ↗
32. IEEE ITRW working group position paper-system integration and application: Gallium nitride: Identifying and addressing challenges to realize the full potential of GaN in power conversion applications10.1109/MPEL.2018.2822898 ↗
33. Applications of gallium nitride in power electronics
34. Dynamic on-resistance in GaN power devices: Mechanisms, characterizations, and modelling10.1109/JESTPE.2019.2925117 ↗
35. Holmes · Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor · 2002
36. Manual · Device Simulation Software · 2008
37. Normally-off AlGaN/GaN HFET with p-type GaN Gate and AlGaN buffer
38. Normally-off high-voltage p-GaN gate GaN HFET with carbon doped buffer
39. H. C. Jackson, “Effect of variation of silicon nitride passivation layer on electron irradiated aluminium gallium nitride/gallium nitride HEMT structures,” Ph.D. dissertation, Department of Engineering Physics, Air University, Ohio, USA, 2014.
40. High electron mobility transistor: A review on analytical models
41. A test circuit for GaN HEMTs dynamic Ron characterization in power electronics applications10.1109/JESTPE.2019.2912130 ↗
42. AlGaN/GaN HEMTs-an overview of device operation and applications10.1109/JPROC.2002.1021567 ↗
43. Sze · Physics of Semiconductor Devices · 2007
44. A. Vais, “Physical simulation of GaN based HEMT,” Master’s Thesis, Chalmers University of Technology, Sweden, 2012.
45. Effect of mole fraction, doping concentration and gate length on the electrical characteristics of nanoelectronic high electron mobility transistor10.1016/j.matpr.2019.06.504 ↗
46. Studies on the variations of drain current in gallium nitride based high electron mobility transistors
47. Relationship between Al content of AlGaN buffer layer on top of initial AlN nucleation layer on Si and vertical leakage current of AlGaN/GaN high-electron-mobility transistor structures
48. Impact of buffer composition on the dynamic on-state resistance of high voltage AlGaN/GaN HFETs
49. Impact of p-GaN gate length on performance of Al-GaN/GaN normally-off HEMT devices
50. 2-D theoretical model for current-voltage characteristics in AlGaN/GaN HEMT’s10.4236/jmp.2012.38115 ↗