journal article·2024-07-01Open access

In-sensor neuromorphic computing using perovskites and transition metal dichalcogenides

Shen-Yi Li, Ji-Tuo Li, Kui Zhou, Yan Yan, Guanglong Ding, Su-Ting Han, Ye Zhou

Journal of Physics: Materials· Volume 7· Issue 3

Abstract

Abstract With the advancements in Web of Things, Artificial Intelligence, and other emerging technologies, there is an increasing demand for artificial visual systems to perceive and learn about external environments. However, traditional sensing and computing systems are limited by the physical separation of sense, processing, and memory units that results in the challenges such as high energy consumption, large additional hardware costs, and long latency time. Integrating neuromorphic computing functions into the sensing unit is an effective way to overcome these challenges. Therefore, it is extremely important to design neuromorphic devices with sensing ability and the properties of low power consumption and high switching speed for exploring in-sensor computing devices and systems. In this review, we provide an elementary introduction to the structures and properties of two common optoelectronic materials, perovskites and transition metal dichalcogenides (TMDs). Subsequently, we discuss the fundamental concepts of neuromorphic devices, including device structures and working mechanisms. Furthermore, we summarize and extensively discuss the applications of perovskites and TMDs in in-sensor computing. Finally, we propose potential strategies to address challenges and offer a brief outlook on the application of optoelectronic materials in term of in-sensor computing.
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Research context

OpenAlex topics: Advanced Memory and Neural Computing · Photoreceptor and optogenetics research · Perovskite Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (100+)

Show source-provided references
1. Lessons for artificial intelligence from the study of natural stupidity10.1038/s42256-019-0038-z ↗
2. Rigorous methodology for the design and upgrade of sensor networks using cutsets10.1021/ie050794w ↗
3. Molecular visual sensing, boolean logic computing, and data security using a droplet-based superwetting paradigm10.1021/acsami.2c11532 ↗
4. A three-dimensional neuromorphic photosensor array for nonvolatile in-sensor computing10.1021/acs.nanolett.3c00899 ↗
5. A bioinspired artificial gustatory neuron for a neuromorphic based electronic tongue10.1021/acs.nanolett.2c01107 ↗
6. Developing a virtual reality healthcare product based on data-driven concepts: a case study10.1016/j.aei.2023.102118 ↗
7. Making sense of sensory language: acquisition of sensory knowledge by individuals with congenital sensory impairments10.1016/j.neuropsychologia.2022.108320 ↗
8. Three-terminal ovonic threshold switch (3T-OTS) with tunable threshold voltage for versatile artificial sensory neurons10.1021/acs.nanolett.1c04125 ↗
9. Organic electronic synapses with low energy consumption10.1016/j.joule.2021.01.005 ↗
10. Flexible artificial sensory systems based on neuromorphic devices10.1021/acsnano.0c10049 ↗
11. Dynamical analysis of an improved FitzHugh-Nagumo neuron model with multiplier-free implementation10.1007/s11071-023-08274-4 ↗
12. Genetically engineered cell membrane nanovesicles for oncolytic adenovirus delivery: a versatile platform for cancer virotherapy10.1021/acs.nanolett.9b00145 ↗
13. Ion-tunable antiambipolarity in mixed ion–electron conducting polymers enables biorealistic organic electrochemical neurons10.1038/s41563-022-01450-8 ↗
14. Neuromorphic properties of flexible carbon nanotube/polydimethylsiloxane nanocomposites10.1007/s42114-022-00599-9 ↗
15. Vertical organic electrochemical transistors for complementary circuits10.1038/s41586-022-05592-2 ↗
16. Effect of low temperature on charge transport in operational planar and mesoporous perovskite solar cells10.1021/acsami.7b14019 ↗
17. Large-scale complementary logic circuit enabled by Al2O3 passivation-induced carrier polarity modulation in tungsten diselenide10.1021/acsami.3c09351 ↗
18. Electronic disorder dominates the charge-carrier dynamics in two-dimensional/three-dimensional organic–inorganic perovskite heterostructure10.1021/acs.jpcc.2c03989 ↗
19. Improved understanding of the electronic and energetic landscapes of perovskite solar cells: high local charge carrier mobility, reduced recombination, and extremely shallow traps10.1021/ja506936f ↗
20. Influence of interface on the charge carrier mobility of La2Ti2O7 layered perovskite thin films measured by the time-of-flight method10.1021/acsaelm.1c00365 ↗
21. Probing carrier dynamics in large-scale MBE-grown PtSe2 films by terahertz spectroscopy10.1021/acsami.3c09792 ↗
22. Se-vacancy healing with substitutional oxygen in WSe2 for high-mobility p-type field-effect transistors10.1021/acsnano.2c11567 ↗
23. Temperature-dependent ambipolar charge carrier mobility in large-crystal hybrid halide perovskite thin films10.1021/acsami.9b04592 ↗
24. Tunable electronic properties, carrier mobility, and contact characteristics in Type-II BSe/Sc2CF2 heterostructures toward next-generation optoelectronic devices10.1021/acs.langmuir.3c02329 ↗
25. Unconventional anisotropy in excitonic properties and carrier mobility in iodine-based XTeI (X = Ga, In) monolayers for visible-light photocatalytic water splitting10.1021/acs.jpcc.2c07367 ↗
26. High versatility and stability of mechanochemically synthesized halide perovskite powders for optoelectronic devices10.1021/acsami.9b09160 ↗
27. Impact of interfacial defects on the properties of monolayer transition metal dichalcogenide lateral heterojunctions10.1021/acs.jpclett.7b00518 ↗
28. Potassium- and rubidium-passivated alloyed perovskite films: optoelectronic properties and moisture stability10.1021/acsenergylett.8b01504 ↗
29. Silicon nanosheets: a promising 2D material with strong ultrafast nonlinear optical response10.1021/acs.jpcc.1c05226 ↗
30. Sulfur-vacancy-enriched MoS 2 nanosheets based heterostructures for near-infrared optoelectronic NO2 sensing10.1021/acsanm.9b02180 ↗
31. Vertical halide segregation and stability of two-dimensional layered perovskite nanostructures: implications for optoelectronic devices10.1021/acsanm.3c02399 ↗
32. Wet-chemical synthesis of surface-passivated halide perovskite microwires for improved optoelectronic performance and stability10.1021/acsami.8b07428 ↗
33. A novel physical unclonable function (PUF) using 16 × 16 pure-HfOx ferroelectric tunnel junction array for security applications10.1088/1361-6528/ac1dd5 ↗
34. Effect of hydrogen migration in SiO2/Al2O3 stacked gate insulator of InGaZnO thin-film transistors10.3390/cryst12050594 ↗
35. Flexible temperature sensor with high sensitivity ranging from liquid nitrogen temperature to 1200 °C10.1088/2631-7990/aca44d ↗
36. Incremental drain-voltage-ramping training method for ferroelectric field-effect transistor synaptic devices10.1109/LED.2021.3127927 ↗
37. Intrinsic variation effect in memristive neural network with weight quantization10.1088/1361-6528/ac7651 ↗
38. Multilevel switching memristor by compliance current adjustment for off-chip training of neuromorphic system10.1016/j.chaos.2021.111587 ↗
39. Gate-tunable large-scale flexible monolayer MoS2 devices for photodetectors and optoelectronic synapses10.1007/s12274-022-4122-z ↗
40. Hybrid mixed-dimensional perovskite/metal-oxide heterojunction for all-in-one opto-electric artificial synapse and retinal-neuromorphic system10.1016/j.nanoen.2022.107686 ↗
41. Methylammonium halide-doped perovskite artificial synapse for light-assisted environmental perception and learning10.1016/j.mtphys.2021.100540 ↗
42. Multifunctional optoelectronic synapse based on ferroelectric van der Waals heterostructure for emulating the entire human visual system10.1002/adfm.202108014 ↗
43. Optoelectronic synaptic memtransistor based on 2D SnSe/MoS2 van der Waals heterostructure under UV–ozone treatment10.1002/smtd.202201679 ↗
44. Polarization‐sensitive optoelectronic synapse based on 3D graphene/MoS2 heterostructure10.1002/adfm.202302288 ↗
45. Red‐light‐stimulated photonic synapses based on nonvolatile perovskite‐based photomemory10.1002/adpr.202000185 ↗
46. Retina‐inspired structurally tunable synaptic perovskite nanocones10.1002/adfm.202105596 ↗
47. 4K-memristor analog-grade passive crossbar circuit10.1038/s41467-021-25455-0 ↗
48. Training and operation of an integrated neuromorphic network based on metal-oxide memristors10.1038/nature14441 ↗
49. Zinc Tin oxide synaptic device for neuromorphic engineering10.1109/ACCESS.2020.3005303 ↗
50. A non-volatile organic electrochemical device as a low-voltage artificial synapse for neuromorphic computing10.1038/nmat4856 ↗
51. Flexible organic field-effect transistor arrays for wearable neuromorphic device applications10.1039/D0NR06478E ↗
52. Ultralow power wearable organic ferroelectric device for optoelectronic neuromorphic computing10.1021/acs.nanolett.2c01768 ↗
53. Manufacturing of graphene based synaptic devices for optoelectronic applications10.1088/2631-7990/acee2e ↗
54. Realize ultralow-energy-consumption photo-synaptic device based on a single (Al,Ga)N nanowire for neuromorphic computing10.1007/s12274-023-6069-0 ↗
55. Squeeze-printing ultrathin 2D gallium oxide out of liquid metal for forming-free neuromorphic memristors10.1021/acsami.3c02998 ↗
56. Unleashing the potential of gallium oxide: a paradigm shift in optoelectronic applications for image sensing and neuromorphic computing applications10.1016/j.mtphys.2023.101279 ↗
57. Two‐terminal perovskite optoelectronic synapse for rapid trained neuromorphic computation with high accuracy10.1002/adma.202402253 ↗
58. Superlow power consumption artificial synapses based on WSe2 quantum dots memristor for neuromorphic computing10.34133/2022/9754876 ↗
59. Halide perovskite quantum dots photosensitized‐amorphous oxide transistors for multimodal synapses10.1002/admt.202000514 ↗
60. Growing perovskite quantum dots on carbon nanotubes for neuromorphic optoelectronic computing10.1002/aelm.202000535 ↗
61. CsPbBr3 quantum dots/PDVT-10 conjugated polymer hybrid film-based photonic synaptic transistors toward high-efficiency neuromorphic computing10.1007/s40843-022-2200-0 ↗
62. Large-scale and flexible optical synapses for neuromorphic computing and integrated visible information sensing memory processing10.1021/acsnano.0c08921 ↗
63. Two/Quasi-two-dimensional perovskite-based heterostructures: construction, properties and applications10.1088/2631-7990/acab40 ↗
64. PbI2 /CH3 NH3 Cl mixed precursor–induced micrometer‐scale grain perovskite film and room‐temperature film encapsulation toward high efficiency and stability of planar perovskite solar cells10.1002/admi.201800499 ↗
65. Photoferroelectric all-van-der-Waals heterostructure for multimode neuromorphic ferroelectric transistors10.1021/acsami.3c00092 ↗
66. Synaptic plasticity and visual memory in a neuromorphic 2D memitter based on WS2 monolayers10.1002/adfm.202403158 ↗
67. Perovskite-based optoelectronic systems for neuromorphic computing10.1016/j.nanoen.2023.109169 ↗
68. The perovskite structure—a review of its role in ceramic science and technology10.1007/s100190000062 ↗
69. Magnetic ,electronic, and optical properties of perovskite materials
70. Multicolor ultralong phosphorescence from perovskite-like octahedral α-AlF310.1038/s41467-022-33540-1 ↗
71. Halide perovskite photoelectric artificial synapses: materials, devices, and applications10.1039/D2NR06403K ↗
72. Formability of ABX 3 (X = F, Cl, Br, I) halide perovskites10.1107/S0108768108032734 ↗
73. Cesium-containing triple cation perovskite solar cells: improved stability, reproducibility and high efficiency10.1039/C5EE03874J ↗
74. Two‐dimensional halide perovskites: approaches to improve optoelectronic properties10.1002/asia.202101075 ↗
75. Advances in the application of perovskite materials10.1007/s40820-023-01140-3 ↗
76. Reducing lead toxicity of perovskite solar cells with a built-in supramolecular complex10.1038/s41893-023-01181-x ↗
77. High-performance inorganic metal halide perovskite transistors10.1038/s41928-022-00712-2 ↗
78. Defects in perovskite-halides and their effects in solar cells10.1038/nenergy.2016.149 ↗
79. Trap states in lead iodide perovskites10.1021/ja512833n ↗
80. Highly efficient perovskite LEDs10.1038/s41578-021-00280-5 ↗
81. A one-step method to synthesize CH3NH3PbI3:MoS2 nanohybrids for high-performance solution-processed photodetectors in the visible region10.1088/1361-6528/aaf608 ↗
82. High detectivity ITO/organolead halide perovskite Schottky photodiodes10.1088/1361-6641/ab075d ↗
83. Perovskite-inspired materials for photovoltaics and beyond—from design to devices10.1088/1361-6528/abcf6d ↗
84. Enhancement of photocatalytic H2 evolution on CdS by loading MoS2 as cocatalyst under visible light irradiation10.1021/ja8007825 ↗
85. Transition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy10.1038/s41467-019-08468-8 ↗
86. van der Waals Metallic transition metal dichalcogenides10.1021/acs.chemrev.7b00618 ↗
87. Large magnetoresistance and finite-size effects in electrodeposited single-crystal Bi thin films10.1103/PhysRevLett.82.3328 ↗
88. Strain engineering of 2D materials: issues and opportunities at the interface10.1002/adma.201805417 ↗
89. Van der Waals epitaxial growth of atomic layered HfS2 crystals for ultrasensitive near‐infrared phototransistors10.1002/adma.201700439 ↗
90. Strategies on phase control in transition metal dichalcogenides10.1002/adfm.201802473 ↗
91. Superconductivity in Weyl semimetal candidate MoTe210.1038/ncomms11038 ↗
92. Coplanar semiconductor–metal circuitry defined on few-layer MoTe2 via polymorphic heteroepitaxy10.1038/nnano.2017.161 ↗
93. Transport evidence of asymmetric spin–orbit coupling in few-layer superconducting 1Td-MoTe210.1038/s41467-019-09995-0 ↗
94. Controllable synthesis of atomically thin type‐II weyl semimetal WTe2 nanosheets: an advanced electrode material for all‐solid‐state flexible supercapacitors10.1002/adma.201701909 ↗
95. Controlling the metal-to-insulator relaxation of the metastable hidden quantum state in 1T-TaS210.1126/sciadv.1500168 ↗
96. Electrically driven reversible insulator–metal phase transition in 1T-TaS210.1021/nl504662b ↗
97. Gate-tunable phase transitions in thin flakes of 1T-TaS210.1038/nnano.2014.323 ↗
98. Surface chemical-modification for engineering the intrinsic physical properties of inorganic two-dimensional nanomaterials10.1039/C4CS00302K ↗
99. Surface functionalization of two-dimensional metal chalcogenides by Lewis acid–base chemistry10.1038/nnano.2015.323 ↗
100. Interface engineering via MoS2 insertion layer for improving resistive switching of conductive‐bridging random access memory10.1002/aelm.201800747 ↗