Perspective on vertical Ga2O3 power MOSFETs utilizing current blocking layer technology
Source abstract
Abstract
Abstract Beta-gallium oxide (β-Ga2O3) power device research activity in the past decade has seen a significant surge due to its remarkable material properties. With an ultra-wide bandgap of 4.8 eV, leading to a high breakdown field of 8 MV cm−1, combined with well-established melt-grown substrate technology, β-Ga2O3 presents an exceptional opportunity to significantly advance power device technology. However, the highly localized holes and large acceptor activation energies render effective p-type doping in Ga2O3 extremely challenging. This has severely hindered the realization of conventional n–p–n type vertical power transistors in β-Ga2O3. Different strategies have been proposed and demonstrated to address this issue. In this perspective, we focus on one of the emerging solutions: using a current-blocking-layer (CBL) to mimic the functionality of the absent p-type layer to realize a vertical transistor with comparable performance. The progress made so far on different CBL designs in vertical β-Ga2O3 MOSFETs will be examined. The future outlook for Mg diffused CBL-enabled Ga2O3 vertical diffused barrier field-effect-transistor (VDBFET) is presented.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Ga2O3 and related materials · Semiconductor materials and devices · GaN-based semiconductor devices and materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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