journal article·2026-07-02

Switch modeling and drive control of GaN HEMTs: current status, challenges and prospects

Bingran Liang, Guidong Zhang, Zhong Li

Circuit World· Volume 52· Issue 2
Publisher page

Abstract

Purpose Gallium nitride high electron mobility transistors (GaN HEMTs) are representative wide-bandgap semiconductor devices characterized by their superior high-frequency switching characteristics. This paper aims to review their modeling methods and drive control technologies, systematically summarize the research progress and predict the future development trends. Design/methodology/approach This paper first introduces the background and advantages of GaN HEMTs and then reviews four modeling methods: physical model, behavioral model, analytical model and hybrid model. It also summarizes their respective characteristics and application scopes. Furthermore, key drive control techniques are discussed in depth. Finally, the development trend of modeling technology is predicted by combining the characteristics of typical devices. Findings Switching modeling methods for GaN HEMTs have advanced to better address high-frequency and high-power application requirements. Each model type offers distinct advantages regarding accuracy, complexity and physical interpretability. Integrating appropriate drive control strategies further enhances system performance. Originality/value This paper summarizes four switching models for GaN HEMTs and compares their characteristics and applicable scenarios. Subsequently, it further explores the driving characteristics and key technologies of GaN HEMTs, including dead time control, segmented driving and level shifting techniques. Finally, future development trends are discussed in light of practical device effects, with a particular focus on multiphysics coupling, emerging artificial intelligence (AI) modeling and adaptive driving technologies.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Silicon Carbide Semiconductor Technologies · Advanced Power Amplifier Design

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Guangdong University of Technology School of Automation, , Guangzhou,

FernUniversität in Hagen Faculty of Mathematics and Computer Science, , Hagen,

References (100+)

Show source-provided references
1. An analytical charge-based drain current model for normally-off p-GaN/AlGaN/GaN HEMTs10.1109/TED.2025.3552360 ↗
2. Physics-based multi-bias RF large-signal GaN HEMT modeling and parameter extraction flow10.1109/JEDS.2017.2724839 ↗
3. A new level up shifter for HVICs with high noise tolerance
4. Hybrid CMOS/GaN 40-MHz maximum 20-V input DC-DC multiphase buck converter10.1109/JSSC.2017.2672986 ↗
5. Modeling of short-channel effects in GaN HEMTs10.1109/TED.2020.3005122 ↗
6. A new empirical nonlinear model for HEMT and MESFET devices10.1109/22.179888 ↗
7. Scalable large-signal modeling for GaN HEMTs including kink effect10.1109/LMWT.2024.3471874 ↗
8. Review and outlook on GaN and SiC power devices: industrial state-of-the-art, applications, and perspectives10.1109/TED.2023.3346369 ↗
9. Bayesian inference-based behavioral modeling technique for GaN HEMTs10.1109/TMTT.2019.2906304 ↗
10. Quasi-2-D physical modeling of GaN microwave HEMTs for RF applications10.1109/TED.2022.3209643 ↗
11. A 10-MHz closed-loop EMI-regulated GaN switching power converter using emulated Miller plateau tracking and adaptive strength gate driving10.1109/JSSC.2020.3005791 ↗
12. A complete switching analytical model of low-voltage eGaN HEMTs and its application in loss analysis10.1109/TIE.2019.2891466 ↗
13. Analysis and design of an RC snubber circuit to suppress false triggering oscillation for GaN devices in half-bridge circuits10.1109/TPEL.2019.2927486 ↗
14. The sustained oscillation modeling and its quantitative suppression methodology for GaN devices10.1109/TPEL.2020.3043472 ↗
15. GaN-on-Si power technology: devices and applications10.1109/TED.2017.2657579 ↗
16. A High-efficiency switching current model for power GaN HEMT based on high-order time-derivative nonlinear current components and advanced neural network algorithms10.1109/TPEL.2025.3544580 ↗
17. A review of switching oscillations of wide bandgap semiconductor devices10.1109/TPEL.2020.2995778 ↗
18. High speed optical gate driver for wide band gap power transistors
19. Physics-based analytical model for input, output, and reverse capacitance of a GaN HEMT with the field-plate structure10.1109/TPEL.2016.2569404 ↗
20. A MESFET model for use in the design GaAs integrated circuits10.1109/TMTT.1980.1130099 ↗
21. A nonlinear GaAs FET model for use in the design of output circuits for power amplifiers10.1109/TMTT.1985.1133229 ↗
22. ASM-HEMT: compact model for GaN HEMTs
23. Díaz · 2012 · 428810.1109/ECCE.2012.6342239 ↗
24. A postprocessing-technique-based switching loss estimation method for GaN devices10.1109/TPEL.2020.3043801 ↗
25. Accurate analytical switching-on loss model of SiC MOSFET considering dynamic transfer characteristic and Qgd10.1109/TPEL.2020.2988899 ↗
26. ANN-based large-signal model of AlGaN/GaN HEMTs with accurate buffer-related trapping effects characterization10.1109/TMTT.2020.2990171 ↗
27. Analytical model for power switching GaN-based HEMT design10.1109/TED.2011.2112771 ↗
28. Analysis of GaN HEMTs switching transients using compact model10.1109/TED.2017.2703103 ↗
29. Transient frequency-voltage support strategy for VSC-MTDC integrated offshore wind farms based on perturbation observer and funnel control10.1109/TSTE.2025.3541326 ↗
30. Review of loss distribution, analysis, and measurement techniques for GaN HEMTs10.1109/TPEL.2019.2954819 ↗
31. Accurate and effective nonlinear behavioral modeling of a 10-W GaN HEMT based on LSTM neural networks10.1109/ACCESS.2023.3258691 ↗
32. GaN HEMT modeling for power and RF applications using ASM-HEMT
33. A review of GaN HEMT dynamic on-resistance and dynamic stress effects on field distribution10.1109/TPEL.2023.3318182 ↗
34. A gate driver with integrated deadtime controller
35. A high-efficiency self-synchronous RF-DC rectifier with a fixed broadband phase offset10.1109/LMWC.2020.3049051 ↗
36. TCAD modeling of a lateral GaN HEMT using empirical data
37. An evolutionary multilayer perceptron-based large-signal model of GaN HEMTs including self-heating and trapping effects10.1109/TMTT.2021.3132892 ↗
38. Design of a high-efficiency sequential load modulated balanced amplifier based on multiple multiobjective Bayesian optimization10.1109/TCAD.2024.3415012 ↗
39. Analytical loss model of high voltage GaN HEMT in cascode configuration10.1109/TPEL.2013.2267804 ↗
40. Characterization and enhancement of high-voltage cascode GaN devices10.1109/TED.2014.2358534 ↗
41. Evaluation and application of 600 V GaN HEMT in cascode structure10.1109/TPEL.2013.2276127 ↗
42. A scalable ANN-based large-signal model for GaN HEMTs using transfer learning10.1109/LMWT.2025.3546453 ↗
43. Accurate, efficient and reliable small-signal modeling approaches for GaN HEMTs10.1109/ACCESS.2023.3317530 ↗
44. Noise immunity enhanced 625V high-side driver
45. Impact of channel hot electrons on current collapse in AlGaN/GaN HEMTs10.1109/LED.2013.2286173 ↗
46. Power electronics based on wide-bandgap semiconductors: opportunities and challenges10.1109/ACCESS.2021.3118897 ↗
47. Performance projection of GaN HEMT: experimental verification using curtice model
48. Modeling of GaN HEMT I-V characteristics using artificial intelligence: optimization study
49. Review of commercial GaN power devices and GaN-Based converter design challenges10.1109/JESTPE.2016.2582685 ↗
50. Analysis of the dν/dt transient of enhancement-mode GaN FETs
51. A 2.5 kV isolation 35 kV/s CMR 250 Mbps digital isolator in standard CMOS with a small transformer driving technique10.1109/JSSC.2011.2170775 ↗
52. An automotive-use 5 MHz, 40 V to 1.2 V, single-stage AOT GaN DC-DC converter with one-cycle transient response and load-adaptive dead time control
53. A tri-slope gate driving GaN DC-DC converter with spurious noise compression and ringing suppression for automotive applications10.1109/JSSC.2017.2749041 ↗
54. ASM GaN: industry standard model for GaN RF and power devices—Part 1: DC, CV, and RF model10.1109/TED.2018.2867874 ↗
55. Combining intelligence with rules for device modeling: approximating the behavior of AlGaN/GaN HEMTs using a hybrid neural network and fuzzy logic inference system10.1109/JEDS.2024.3461169 ↗
56. Integrated transformer-coupled isolation10.1109/MIM.2003.1184271 ↗
57. Stability, reliability, and robustness of GaN power devices: a review10.1109/TPEL.2023.3266365 ↗
58. CMOS integrated optical isolator for power transistor gate driver
59. GaN high electron mobility transistors for sub-millimeter wave applications10.7567/JJAP.53.100212 ↗
60. A temperature-dependent nonlinear analytic model for AlGaN-GaN HEMTs on SiC10.1109/TMTT.2003.821227 ↗
61. Modeling and analysis of bridge-leg crosstalk of GaN HEMT considering nonlinear junction capacitances10.1109/TPEL.2020.3024962 ↗
62. Physics-based SPICE modeling of dynamic on-state resistance of p-GaN HEMTs10.1109/TPEL.2023.3262938 ↗
63. Nonsegmented turn-on switching transient analytical model for fast-switching GaN HEMT with datasheet-driven unified IV characterization10.1109/TIE.2025.3528485 ↗
64. A high-power PCCM LED driver based on GaN eHEMT with hybrid dimming modes10.1108/CW-12-2020-0350 ↗
65. A new design technique for sub-nanosecond delay and 200 V/ns power supply slew-tolerant floating voltage level shifters for GaN SMPS
66. Design of 370-ps delay floating-voltage level shifters with 30-V/ns power supply slew tolerance
67. A compact broadband high power quasi-MMIC GaN power amplifier10.1108/CW-07-2020-0157 ↗
68. Electro-thermal coupling characteristics of GaN SBDs under HPM pulses: effect of dislocation density and deep learning predictive model10.1109/TPEL.2025.3614847 ↗
69. Package parasitic inductance extraction and simulation model development for the high-voltage cascode GaN HEMT10.1109/TPEL.2013.2264941 ↗
70. Quantitative modeling and analysis of switching oscillations of cascode GaN devices in half-bridge converters10.1109/JESTPE.2022.3173007 ↗
71. A review of circuit models for GaN power devices
72. Majid · 2012 · 1
73. 94.6% Peak efficiency DCM buck converter with fast adaptive dead-time control
74. A hybrid physical ASM-HEMT model using a neural network-based methodology
75. A survey of wide bandgap power semiconductor devices10.1109/TPEL.2013.2268900 ↗
76. AlGaN/GaN HEMTs—an overview of device operation and applications10.1109/JPROC.2002.1021567 ↗
77. Magnetically isolated gate driver with leakage inductance immunity10.1109/TPEL.2013.2279548 ↗
78. An improved EEHEMT RF noise model for 0.25 μm InGaP pHEMT transistor using Verilog-A language10.1587/transele.E100.C.424 ↗
79. Physical modeling of charge trapping effects in GaN/Si devices and incorporation in the ASM-HEMT model10.1109/JEDS.2021.3103596 ↗
80. Accurate modeling of GaN HEMT RF behavior using an effective trapping potential10.1109/TMTT.2017.2748950 ↗
81. Commercial GaN-based power electronic systems: a review10.1007/s11664-020-08397-z ↗
82. A high-bandwidth and easy-to-integrate parasitics-based switching current measurement method for fast GaN devices10.1109/TPEL.2022.3200407 ↗
83. A novel adaptive dead-time control method for GaN-based motor drives10.1109/TEC.2024.3431940 ↗
84. Facilitation of GaN-based RF- and HV-circuit designs using MVS-GaN HEMT compact model10.1109/TED.2018.2848721 ↗
85. MIT virtual source GaNFET-high voltage (MVSG-HV) model: a physics based compact model for HV-GaN HEMTs10.1002/pssc.201300392 ↗
86. High voltage GaN HEMT compact model: experimental verification, field plate optimization and charge trapping
87. Physics-based GaN HEMT transport and charge model: experimental verification and performance projection
88. Microtransformer-based isolated signal and power transmission10.1109/TPEL.2012.2189250 ↗
89. Investigation of self-heating effect on DC and RF performances in AlGaN/GaN HEMTs on CVD-diamond10.1109/JEDS.2019.2947564 ↗
90. Higher order thermal impedance extraction of GaN power HEMTs by I-V measurements10.1109/TED.2025.3539594 ↗
91. 600V SOI gate driver IC with advanced level shifter concepts for medium and high power applications
92. Rouger · 2011 · 35610.1109/ISPSD.2011.5890864 ↗
93. An analytical turn-on power loss model for 650-V GaN eHEMTs
94. On-chip HV bootstrap gate driving for GaN compatible power circuits operating above 10 MHz10.1109/JSSC.2021.3112507 ↗
95. A study of MOSFET performance in processor targeted buck and synchronous rectifier buck converters
96. Image steganography: a review of the recent advances10.1109/ACCESS.2021.3053998 ↗
97. A comparison review of the resonant gate driver in the silicon MOSFET and the GaN transistor application10.1109/TIA.2019.2914193 ↗
98. GaN power integration for high frequency and high efficiency power applications: a review10.1109/ACCESS.2020.2967027 ↗
99. Artificial neural network nonlinear transistor behavioral models: structure and parameter determination process based on the Cardiff model10.1109/TMTT.2024.3434959 ↗
100. Using graph attention network to reversely design GaN MIS-HEMTs based on hand-drawn characteristics10.1109/ACCESS.2023.3293001 ↗