Front Cover: Synthesis and Characterization of Zirconium Disulfide Single Crystals and Thin‐Film Transistors Based on Multilayer Zirconium Disulfide Flakes (ChemNanoMat 10/2018)

Semiconducting two-dimensional materials such as transition metal dichalcogenides have attracted considerable attention because they can be used as ultrathin materials for various applications including flexible electronic devices. Single crystals of zirconium disulfide (ZrS2) are synthesized by a chemical vapor transport method. Field-effect transistors using exfoliated multilayer ZrS2 flakes exhibit n-channel characteristics with an on/off ratio of approximately 200. More information can be found in the Full Paper by Yoshihiro Shimazu et al. on page 1078 in Issue 10, 2018 (DOI: 10.1002/cnma.201800304).