journal article·2022-09Open access

Chemical Interpretation of Charged Point Defects in Semiconductors: A Case Study of Mg 2 Si

Michael Y. Toriyama, Madison K. Brod, G. Jeffrey Snyder

ChemNanoMat· Volume 8· Issue 9

Abstract

Abstract The electronic structures of charged point defects influence electrical and optical properties of semiconductors. Understanding the orbital interactions responsible for the electronic structures of defects therefore promotes a chemical intuition for defect‐driven mechanisms in semiconductors. In this tutorial, we discuss a molecular orbital theory‐based framework for understanding defect‐induced electronic states based on local chemical interactions between the defect and the atoms surrounding the defect site. By using Mg 2 Si as a case study, we show how both the chemical interactions and molecular orbitals (i. e., wave functions) responsible for the charge state(s) of a defect can be understood from the bonding symmetry of the defect site. We anticipate that a chemistry‐based perspective of charged defects will enrich defect engineering efforts for electronic and optical materials.
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Research context

OpenAlex topics: Semiconductor materials and interfaces · Semiconductor materials and devices · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Materials Science and Engineering Northwestern University 633 Clark St. Evanston, IL 60208 United States of America

Funding

Northwestern University · Office of the University Provost, Arizona State University

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