Chemical Interpretation of Charged Point Defects in Semiconductors: A Case Study of Mg 2 Si
Source abstract
Abstract
Abstract The electronic structures of charged point defects influence electrical and optical properties of semiconductors. Understanding the orbital interactions responsible for the electronic structures of defects therefore promotes a chemical intuition for defect‐driven mechanisms in semiconductors. In this tutorial, we discuss a molecular orbital theory‐based framework for understanding defect‐induced electronic states based on local chemical interactions between the defect and the atoms surrounding the defect site. By using Mg 2 Si as a case study, we show how both the chemical interactions and molecular orbitals (i. e., wave functions) responsible for the charge state(s) of a defect can be understood from the bonding symmetry of the defect site. We anticipate that a chemistry‐based perspective of charged defects will enrich defect engineering efforts for electronic and optical materials.
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Research context
OpenAlex topics: Semiconductor materials and interfaces · Semiconductor materials and devices · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Materials Science and Engineering Northwestern University 633 Clark St. Evanston, IL 60208 United States of America
Funding
Northwestern University · Office of the University Provost, Arizona State University
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