Defect-Limited Efficiency of Pnictogen Chalcohalide Solar Cells

Pnictogen chalcohalides (MChX) have recently emerged as promising nontoxic and environmentally friendly photovoltaic absorbers, combining strong light absorption coefficients with favorable low-temperature synthesis conditions. Despite these advantages and reported optimized morphologies, device efficiencies remain below 10%, far from their ideal radiative limit. To uncover the origin of these performance losses, we present a systematic and fully consistent first-principles investigation of the defect chemistry across the Bi-based chalcohalide family. Our results reveal a complex defect landscape dominated by chalcogen vacancies of low formation energy, which act as deep nonradiative recombination centers. Despite their moderate charge-carrier capture coefficients, the high equilibrium concentrations of these defects reduce the theoretical maximum efficiencies by 6% in BiSeI and by 10% in BiSeBr. In contrast, sulfur vacancies in BiSI and BiSBr are comparatively benign, presenting smaller capture coefficients due to weaker electron-phonon coupling. Interestingly, despite its huge nonradiative charge-carrier recombination rate, BiSeI presents the best conversion efficiency among all four compounds owing to its most suitable bandgap for outdoor photovoltaic applications. Our findings identify defect chemistry as a critical bottleneck in MChX solar cells and propose chalcogen-rich synthesis conditions and targeted anion substitutions as effective strategies for mitigation of detrimental vacancies.