Synthesis of Size-Tunable Indium Nitride Nanocrystals

Indium nitride (InN) is an air stable III-V semiconductor with a small band gap of 0.7 eV and as such is of interest as a key material in near-infrared (NIR) LEDs, photodetectors, and multijunction solar cells. Conventionally, InN has been synthesized through physical deposition techniques which involve extreme temperatures and harsh conditions and yield nonluminescent materials. Here we report a new low temperature, solution-based synthetic route to colloidal InN nanocrystals that produces phase-pure wurtzite InN with tunable photoluminescence. The luminescence is attributed to the presence of InN surface states.