journal article·2026-05-14

Enabling Advanced Bioinspired Computing and Hardware Security in Sb 2 (S,Se) 3 Memristors via Titanium Interfacial Engineering

Yuanfeng Sun, Yuanhui Yang, Liangliang Feng, Shixing Teng, Yuhang Wang, Haoyuan Li, Chuanzhen Dong, Shifu Xiong, Hongling Guo

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Abstract

Neuromorphic systems for artificial intelligence require capabilities for both sophisticated sensory perception and secure data processing. However, the performance and reliability of memristors are critically limited by the electrode/functional layer interface, which governs the energy barriers for ion migration and charge injection, representing a key bottleneck for realizing complex biomimetic functions. Given the promising potential of chalcogenide semiconductors like Sb2(S,Se)3, due to their unique sensitivity to light and electrical stimuli, this work addresses the challenge by constructing a novel Ti/Sb2(S,Se)3 heterojunction interface. This interfacial engineering effectively reduces the built-in electric field, facilitating the formation of stable selenium vacancy CFs. The resulting Sb2(S,Se)3 memristors exhibit superior performance, including a high on/off ratio, stable endurance, and long-term retention. Furthermore, the device not only leverages its intrinsic stochasticity for image encryption simulation based on hardware characteristics but also successfully emulates complex biomimetic functions, including the full spectrum of nociceptive perception. This work establishes interfacial engineering as a versatile strategy for designing stable, high-performance chalcogenide memristors for advanced bioinspired and secure computing applications.
Source: europepmc · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Phase-change materials and chalcogenides

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Integrated Circuit Science and Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices

Tianjin University of Technology

Tianjin Key Laboratory of Functional Crystal Materials, Institute of Functional Crystals

Funding

National Natural Science Foundation of China · Shanghai Key Laboratory of Optical Coatings and Spectral Modulation

References (43)

Show source-provided references
1. 10.1002/adma.20241142010.1002/adma.202411420 ↗
2. 10.1038/s41928-024-01280-310.1038/s41928-024-01280-3 ↗
3. 10.1038/s41586-025-08733-510.1038/s41586-025-08733-5 ↗
4. 10.1126/science.ade348310.1126/science.ade3483 ↗
5. 10.1021/nl904092h10.1021/nl904092h ↗
6. 10.1002/adfm.20240554410.1002/adfm.202405544 ↗
7. 10.1002/adfm.20250388310.1002/adfm.202503883 ↗
8. 10.1088/1361-6641/aa9a8f10.1088/1361-6641/aa9a8f ↗
9. 10.1002/adfm.20240943610.1002/adfm.202409436 ↗
10. 10.1007/s40820-025-01891-110.1007/s40820-025-01891-1 ↗
11. 10.1002/advs.20240263510.1002/advs.202402635 ↗
12. 10.1002/adfm.20200677310.1002/adfm.202006773 ↗
13. 10.1002/adma.20241408210.1002/adma.202414082 ↗
14. 10.1039/D4TA07389D10.1039/D4TA07389D ↗
15. 10.1038/s41467-021-23592-010.1038/s41467-021-23592-0 ↗
16. 10.1002/advs.20250990310.1002/advs.202509903 ↗
17. 10.1002/adma.20210434610.1002/adma.202104346 ↗
18. 10.1021/acs.jpclett.4c0336710.1021/acs.jpclett.4c03367 ↗
19. 10.1021/acs.chemrev.4c0058710.1021/acs.chemrev.4c00587 ↗
20. 10.1002/adfm.20230521110.1002/adfm.202305211 ↗
21. 10.1002/advs.20230496310.1002/advs.202304963 ↗
22. 10.1002/advs.20240931210.1002/advs.202409312 ↗
23. 10.1002/adma.20241066910.1002/adma.202410669 ↗
24. 10.1002/advs.20251138710.1002/advs.202511387 ↗
25. 10.1039/D4SC05893C10.1039/D4SC05893C ↗
26. 10.1002/aenm.20230039110.1002/aenm.202300391 ↗
27. 10.1002/advs.20240813310.1002/advs.202408133 ↗
28. 10.1002/advs.20250419910.1002/advs.202504199 ↗
29. 10.1016/j.cej.2025.17008210.1016/j.cej.2025.170082 ↗
30. 10.1002/advs.20187005110.1002/advs.201870051 ↗
31. 10.1038/s41467-025-60038-310.1038/s41467-025-60038-3 ↗
32. 10.1016/j.apsusc.2017.07.25710.1016/j.apsusc.2017.07.257 ↗
33. 10.1016/j.apsusc.2022.15469810.1016/j.apsusc.2022.154698 ↗
34. 10.1002/adma.20090037510.1002/adma.200900375 ↗
35. 10.1007/s40843-023-2653-x10.1007/s40843-023-2653-x ↗
36. 10.1007/s40843-023-2738-510.1007/s40843-023-2738-5 ↗
37. 10.1021/acsami.2c0165010.1021/acsami.2c01650 ↗
38. 10.1038/s41467-022-28235-610.1038/s41467-022-28235-6 ↗
39. 10.1038/nn199210.1038/nn1992 ↗
40. 10.1038/s41467-017-02572-310.1038/s41467-017-02572-3 ↗
41. 10.1002/advs.20220062910.1002/advs.202200629 ↗
42. 10.1038/s41467-020-17870-610.1038/s41467-020-17870-6 ↗
43. 10.1002/advs.20240566710.1002/advs.202405667 ↗