Recent Progress in Tungsten Diselenide Field-Effect Transistors: Materials, Fabrication, and Applications

As a representative two-dimensional transition metal dichalcogenide, tungsten diselenide (WSe 2 ) has garnered significant attention in next-generation transistor technologies, attributed to its atomic-scale thickness, layer-tunable bandgap, high carrier mobility, and exceptional mechanical flexibility. Most notably, WSe 2 exhibits a distinct ambipolar transport behavior, enabling superior p-type and n-type semiconducting performance under rational modulation. This review systematically summarizes recent advances in WSe 2 -based field-effect transistors, with an emphasis on material synthesis, device engineering, and emerging applications in logic circuits, photodetectors, flexible electronic devices, and artificial synaptic devices for neuromorphic computing. Critical methodologies for enhancing device performance, including contact engineering, channel doping techniques, and dielectric interface optimization, are comprehensively discussed. This review further addresses persistent challenges in material synthesis controllability, doping stability, interface integration, and scalable fabrication. Looking forward, future prospects for WSe 2 transistors in multifunctional integration and flexible electronics are overall outlined, highlighting a promising direction toward practical application beyond laboratory researches.