journal article·2025-08-12

Strain Engineering Boosts Piezo-/Ferroelectricity in AlScN Alloy: Insights from First-Principles Calculations

Zenghui Liu, Zhenjun Shao, Yunjian Cao, Hao Li, Lin Yang, Hangyu Zhou, Jun Xu, Jingrui Li, Gang Niu, Wei Ren, Zuo-Guang Ye

Chemistry of Materials· Volume 37· Issue 15
Publisher page

Abstract

AlScN is a highly promising novel ferroelectric material featuring excellent high-temperature stability and CMOS compatibility, making it a potential candidate for 5G RF front-end filters, next-generation power devices, memories, and emerging in-memory computing devices. However, the rather mediocre piezoelectric coefficient and relatively large coercive field remain critical bottlenecks for its widespread adoption in applications. To provide theoretical guidance and effective strategies for optimizing the AlScN performance, we propose a synergistic regulation strategy based on alloying and strain engineering and conduct first-principles calculations using density functional theory to investigate the effects of Sc concentration and epitaxial tensile strain on the properties of AlScN. The proposed strategy is found to effectively enhance the piezoelectric strain coefficient ( d 33 > 300 pC·N –1 ) and electromechanical coupling coefficient ( k 33 2 ∼ 55%) of AlScN, and reduce its coercive field ( E C ), while maintaining a large polarization ( P sp > 68 μC·cm –2 ). The substantial increase in d 33 and k 33 2 is highly beneficial for optimizing the performance of bulk acoustic wave resonators for signal processing in RF applications. Meanwhile, the reduction in E C provides new opportunities for low-power ferroelectric memory devices, such as ferroelectric random-access memory and in-memory computing synaptic devices. The weakened bond strength and enhanced Born effective charge are found to be crucial in these performance optimizations. Furthermore, we examine the high-temperature stability of strain-engineered AlN-based piezo-/ferroelectric materials through ab initio molecular dynamics simulations. This work not only provides an effective strategy and valuable insights for physical property optimization in AlScN from the theoretical point of view but also clarifies the mechanisms of enhanced piezo-/ferroelectricity in wurtzite alloy systems by application of epitaxial strain and chemical modification.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Acoustic Wave Resonator Technologies · GaN-based semiconductor devices and materials · Ferroelectric and Piezoelectric Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering

Xi’an Jiaotong University

State Key Laboratory for Manufacturing Systems Engineering & International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology

Department of Chemistry and 4D LABORATORIES

Simon Fraser University

Funding

Natural Sciences and Engineering Research Council of Canada · National Natural Science Foundation of China

References (51)

Show source-provided references
1. 10.1038/s41586-024-08295-y10.1038/s41586-024-08295-y ↗
2. 10.1080/10408436.2024.240624710.1080/10408436.2024.2406247 ↗
3. 10.1007/s40820-024-01441-110.1007/s40820-024-01441-1 ↗
4. 10.1002/adfm.20220220410.1002/adfm.202202204 ↗
5. 10.1016/j.nanoen.2018.06.06210.1016/j.nanoen.2018.06.062 ↗
6. 10.1063/1.470789810.1063/1.4707898 ↗
7. 10.1063/1.321658610.1063/1.3216586 ↗
8. 10.1016/0003-682X(94)90091-410.1016/0003-682X(94)90091-4 ↗
9. 10.1063/1.325107210.1063/1.3251072 ↗
10. 10.1002/adma.20080261110.1002/adma.200802611 ↗
11. 10.1016/j.measurement.2024.11531810.1016/j.measurement.2024.115318 ↗
12. 10.1016/j.jre.2022.03.00910.1016/j.jre.2022.03.009 ↗
13. 10.1063/1.508494510.1063/1.5084945 ↗
14. 10.1002/smll.20240471110.1002/smll.202404711 ↗
15. 10.1016/j.nanoen.2024.10947310.1016/j.nanoen.2024.109473 ↗
16. 10.1021/acs.nanolett.0c0505110.1021/acs.nanolett.0c05051 ↗
17. 10.1038/s41565-023-01399-y10.1038/s41565-023-01399-y ↗
18. 10.1063/5.008750510.1063/5.0087505 ↗
19. 10.1063/5.001528110.1063/5.0015281 ↗
20. 10.1002/aelm.20240027910.1002/aelm.202400279 ↗
21. 10.1002/adfm.20180132710.1002/adfm.201801327 ↗
22. 10.1002/adem.20190041010.1002/adem.201900410 ↗
23. 10.1002/adma.20140330110.1002/adma.201403301 ↗
24. 10.1002/advs.20200091710.1002/advs.202000917 ↗
25. 10.1088/1361-6463/acddf410.1088/1361-6463/acddf4 ↗
26. 10.1016/j.mee.2023.11213110.1016/j.mee.2023.112131 ↗
27. 10.1088/1361-651X/ac13cc10.1088/1361-651X/ac13cc ↗
28. 10.1021/acsami.8b2260210.1021/acsami.8b22602 ↗
29. 10.1002/pssb.20220007910.1002/pssb.202200079 ↗
30. 10.1063/5.004361310.1063/5.0043613 ↗
31. 10.1038/s41524-025-01517-510.1038/s41524-025-01517-5 ↗
32. 10.1103/PhysRevB.42.962210.1103/PhysRevB.42.9622 ↗
33. 10.1103/PhysRevLett.65.35310.1103/PhysRevLett.65.353 ↗
34. 10.1103/PhysRevLett.77.386510.1103/PhysRevLett.77.3865 ↗
35. 10.1016/0927-0256(96)00008-010.1016/0927-0256(96)00008-0 ↗
36. 10.1103/PhysRevB.54.1116910.1103/PhysRevB.54.11169 ↗
37. 10.1103/PhysRevB.49.1425110.1103/PhysRevB.49.14251 ↗
38. 10.1103/PhysRevB.50.1795310.1103/PhysRevB.50.17953 ↗
39. 10.1016/j.jcrysgro.2022.12688910.1016/j.jcrysgro.2022.126889 ↗
40. 10.1103/PhysRevB.90.22410410.1103/PhysRevB.90.224104 ↗
41. 10.1103/PhysRevLett.104.13760110.1103/PhysRevLett.104.137601 ↗
42. 10.1039/D4MH00551A10.1039/D4MH00551A ↗
43. 10.1142/S021797920201561310.1142/S0217979202015613 ↗
44. 10.1038/s41563-022-01266-610.1038/s41563-022-01266-6 ↗
45. 10.1002/aelm.20240013610.1002/aelm.202400136 ↗
46. 10.1038/srep4348210.1038/srep43482 ↗
47. 10.1109/TUFFC.2015.00725210.1109/TUFFC.2015.007252 ↗
48. 10.1109/JMEMS.2019.292391910.1109/JMEMS.2019.2923919 ↗
49. 10.1109/TUFFC.2016.254718810.1109/TUFFC.2016.2547188 ↗
50. 10.1149/1.242768610.1149/1.2427686 ↗
51. 10.1134/1.125975010.1134/1.1259750 ↗