DataVXChemistry of MaterialsPaper
journal article·2021-04-13Open access

Radically Tunable n-Type Organic Semiconductor via Polymorph Control

Daniel William Davies, Sang Kyu Park, Prapti Kafle, Hyunjoong Chung, Dafei Yuan, Joseph W. Strzalka, Stefan C. B. Mannsfeld, SuYin Grass Wang, Yu-Sheng Chen, Danielle L. Gray, Xiaozhang Zhu, Ying Diao

Chemistry of Materials· Volume 33· Issue 7
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Source abstract

Abstract

Polymorphism has emerged as an important design consideration in organic semiconductors (OSCs). Previously, in many OSCs, even small changes in molecular stacking can cause drastic changes to the optical and electronic properties. However, investigation into n-type semiconductors has significantly lagged behind their p-type counterparts. In this work, we present the prolific polymorphism of 2-dimensional quinoidal terthiophene (2DQTT-o-B) and systematically investigate each of 5 polymorphs, 3 of which have been previously unreported. Grazing incidence X-ray diffraction provided a key method to understanding the structure of each polymorph. Via the polymorphic transitions mapped, we tuned the electron mobility by 5 orders of magnitude, from 5.63 × 10–5 to 0.22 cm2 V−1 s–1. These were accompanied by modifications to the optical properties, namely we observed substantial differences in the refractive index noted by intensity differences under polarized optical microscopy and a large shift in optical band gap from 1.18 eV up to 1.40 eV. Finally, we suggest that changes to these properties may be related to the unique quinoidal to aromatic transition observed in quinoidal molecules.
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Research context

Electronic materials

OpenAlex topics: Organic Electronics and Photovoltaics · Conducting polymers and applications · Perovskite Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Chemical and Biomolecular Engineering, University of Illinois at Urbana−Champaign, 600 South Mathews Avenue, Urbana, Illinois 61801, United States

Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China

X-Ray Science Division, Argonne National Laboratory, Argonne, Illinois 60439, United States

Cluster of Excellence Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, 01062 Dresden, Germany

George L. Clark X-Ray Facilitiy, School of Chemical Sciences, University of Illinois, 505 South Mathews Avenue, Box 59-1 M/C 712, Urbana, Illinois 61801, United States

Beckman Institute for Advanced Science and Technology 405 North Mathews Avenue M/C 251, Urbana, Illinois 61801, United States

Funding

Department of Energy · National Key R&D Program of China · Sloan Research Fellowship in Chemistry · 3M Nontenured Faculty Award

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