journal article·2014-12-23

Imprint Control of Nonvolatile Shape Memory with Asymmetric Ferroelectric Multilayers

Woo-Hee Kim, Jong Yeog Son, Young-Han Shin, Hyun Myung Jang

Chemistry of Materials· Volume 26· Issue 24
Publisher page

Abstract

ADVERTISEMENT RETURN TO ISSUEPREVCommunicationNEXTImprint Control of Nonvolatile Shape Memory with Asymmetric Ferroelectric MultilayersWoo-Hee Kim†, Jong Yeog Son*‡, Young-Han Shin*§, and Hyun Myung Jang∥View Author Information† Department of Chemical Engineering, Stanford University, 381 North-South Mall, Stanford, California 94305, United States‡ Department of Applied Physics, Kyung Hee University, 1732 Deogyeong-daero, Yongin 446-701, Republic of Korea§ Department of Physics and EHSRC, University of Ulsan, Ulsan 680-749, Republic of Korea∥ Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Nam-Gu, Pohang 790-784, Republic of Korea*E-mail: [email protected] (J. Y. Son).*E-mail: [email protected] (Y.-H. Shin).Cite this: Chem. Mater. 2014, 26, 24, 6911–6914Publication Date (Web):November 24, 2014Publication History Received12 August 2014Revised19 November 2014Published online4 December 2014Published inissue 23 December 2014https://doi.org/10.1021/cm5029782Copyright © 2014 American Chemical SocietyRIGHTS & PERMISSIONSArticle Views885Altmetric-Citations15LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InReddit Read OnlinePDF (2 MB) Get e-AlertsSupporting Info (1)»Supporting Information Supporting Information SUBJECTS:Capacitors,Electric fields,Piezoelectrics,Polarization,Thin films Get e-Alerts
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Research context

OpenAlex topics: Ferroelectric and Piezoelectric Materials · Acoustic Wave Resonator Technologies · Advanced Memory and Neural Computing

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Chemical Engineering, Stanford University, 381 North-South Mall, Stanford, California 94305, United States

Department of Applied Physics, Kyung Hee University, 1732 Deogyeong-daero, Yongin 446-701, Republic of Korea

Department of Physics and EHSRC, University of Ulsan, Ulsan 680-749, Republic of Korea

Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Nam-Gu, Pohang 790-784, Republic of Korea

Funding

National Research Foundation of Korea

References (39)

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