DataVXChemistry of MaterialsPaper
journal article·2022-02-22

Molecular Doping of a Hole-Transporting Material for Efficient and Stable Perovskite Solar Cells

Junsheng Luo, Jinqing Zhu, Fangyan Lin, Jianxing Xia, Hua Yang, JinyuYang, Ruilin Wang, Junyu Yuan, Zhongquan Wan, Ning Li, Christoph J. Brabec, Chunyang Jia

Chemistry of Materials· Volume 34· Issue 4
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Source abstract

Abstract

The bis(trifluoromethane)sulfonimide lithium salt (Li-TFSI) is commonly used as an effective dopant to improve the conductivity and hole mobility of Spiro-OMeTAD in state-of-the-art n–i–p perovskite solar cells (PSCs). However, such doping severely induces device instability because of the ultrahygroscopic and migratory nature of Li+ ions. Here, we demonstrate a fluorinated Fe(F20TPP)Cl with a hydrophobic property and a high migration barrier as a potential alternative to replace the Li-TFSI in doped Spiro-OMeTAD. The optimized PSCs show a champion power conversion efficiency as high as 21.53% with a stabilized efficiency exceeding 21%. In addition, long-term stability of PSCs is significantly improved, and the device retains 84% of its initial efficiency after 900 h under continuous 100 mW cm–2 white light-emitting diode illumination and 89% of its initial efficiency after even 50 days in an ambient environment without encapsulation. We believe that this work addresses the fundamental question of intrinsic and extrinsic instability in Li-TFSI-based PSCs by combining simulation and experimental studies. The novel dopant Fe(F20TPP)Cl developed for Spiro-OMeTAD in this work can effectively meet the demands of future photovoltaic applications with promising efficiency and device stability.
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Research context

Electronic materials

OpenAlex topics: Perovskite Materials and Applications · Conducting polymers and applications · Organic Light-Emitting Diodes Research

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China

Shenzhen Institute for Advanced Study, University of Electronic Science and Technology of China, Shenzhen 518110, P. R. China

Institute of Materials for Electronics and Energy Technology (i-MEET), Friedrich-Alexander University Erlangen-Nürnberg, Martensstr. 7, Erlangen 91058, Germany

Dongguan Neutron Science Center, Dongguan 523803, P. R. China

College of Materials Science and Engineering, Sichuan University, Chengdu 610065, P. R. China

Helmholtz-Institute Erlangen-Nürenberg (HIERN), Immerwahrstr. 2, Erlangen 91058, Germany

Funding

Ministry of Education of the People's Republic of China · Ministry of Science and Technology of the People's Republic of China · Deutsche Forschungsgemeinschaft · Natural Science Foundation of Shenzhen Innovation Committee · Sino-German Postdoc Scholarship Program · National Natural Science Foundation of China · Technical Field Funds of 173 Project · Sichuan Science and Technology Program

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