journal article·2018-10-23Open access

Two-Dimensional CsAg5Te3–xSx Semiconductors: Multi-anion Chalcogenides with Dynamic Disorder and Ultralow Thermal Conductivity

James M. Hodges, Yi Xia, Christos D. Malliakas, Grant C. B. Alexander, Maria K. Y. Chan, Mercouri G. Kanatzidis

Chemistry of Materials· Volume 30· Issue 20

Abstract

Metal chalcogenides underpin a wide variety of energy-related applications and are ideal systems for probing lattice dynamics and fundamental transport phenomena. Here we describe the synthesis and transport properties of CsAg5TeS2 and its solid solution CsAg5Te3–xSx (x = 1–2), new semiconductors with tunable band gaps ranging from 0.17 to 0.30 eV. CsAg5TeS2 has a fully ordered two-dimensional structure that includes a group of Ag atoms in a heteroleptic tetrahedral coordination geometry (AgTe2S2). Single-crystal X-ray diffraction indicates that the compounds crystallize in the tetragonal space group P4/mmm, while pair distribution function (PDF) analysis reveals off-centering at the heteroleptic Ag sites, signifying the lower-symmetry I4/mcm space group. The underlying disorder acts as a phonon-blocking mechanism that helps facilitate an ultralow lattice thermal conductivity below 0.40 W·m–1·K–1 at ∼300 K , highlighting the importance of local disorder in thermal transport. Density functional theory provides additional insight into the electronic and thermal properties of the materials, which are good candidates for p-type thermoelectrics.
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Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Machine Learning in Materials Science

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States

Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, United States

Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States

Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, United States

Funding

Basic Energy Sciences

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