journal article·2012-05-08

Regulation of Magnetic Behavior and Electronic Configuration in Mn-Doped ZnO Nanorods through Surface Modifications

Linjuan Zhang, Jian-Qiang Wang, Jiong Li, Shuo Zhang, Zheng Jiang, Jing Zhou, Jie Cheng, Tiandou Hu, Wensheng Yan, Xiangjun Wei, Ziyu Wu

Chemistry of Materials· Volume 24· Issue 9
Publisher page

Abstract

In this research, Mn-doped ZnO nanorods were synthesized by a solvothermal method and their magnetic behavior was tuned from paramagnetism to ferromagnetism via a change in their surface environment. The structure and electronic configuration of Mn ions were investigated by means of X-ray diffraction and X-ray absorption fine structure to understand the surface-controlled magnetic properties. The surface electronic configuration was studied by Mn L 3,2 -edge XANES, which were simulated using the ligand field multiplet theory and the ligand-to-metal charge transfer effects. The results pointed out that Mn 3+ ions occupy distorted tetrahedronal sites near the surface region and different surface modifications produce changes in the Mn 3d-anion p hybridization strength. A midgap state with strong O-2p character has been also recognized at the O K-edge XANES, and the density of such a state is strongly related to the observed ferromagnetism. This research represents a novel promising route for tuning the magnetic behavior of nano-dilute magnetic semiconductor systems via surface atomic changes.
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Research context

OpenAlex topics: ZnO doping and properties · Copper-based nanomaterials and applications · Multiferroics and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, P. R. China

Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, P. R. China

National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, P. R. China

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