Composition- and Size-Controlled I–V–VI Semiconductor Nanocrystals
Source abstract
Abstract
Nonisovalent ternary and quaternary semiconductors (i.e., having two or more cations with different valence electrons) have unique structural and electronic properties that are leveraged in photovoltaic, thermoelectric, and phase-change memory devices. Making these complex semiconductors in the form of colloidal nanocrystals imparts size-dependent properties and solution processability. Here, we present results on I–V–VI group colloidal nanocrystals. We focus on achieving sub-10 nm sizes for a wide range of I–V–VI selenide nanocrystals, including AgSbSe2, AgSb2Se3, CuSbSe2, Cu3SbSe4, AgBiSe2, and CuBiSe2. To highlight one possible application of these I–V–VI colloidal nanomaterials, we analyze the optical absorption and show that through composition and size control, this class of materials offers bandgaps in the mid- to near-IR. Absorption coefficients of AgSbSe2, CuSbSe2, and Cu3SbSe4 nanocrystals are on par with or higher than those of the well-studied PbS nanocrystals, highlighting their potential for devices such as solar cells, (mid-)infrared photodetectors, and near-infrared bio-imaging systems.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Crystal Structures and Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Materials and Device Engineering Group, Department of Information Technology and Electrical Engineering, ETH Zurich, CH-8092 Zurich, Switzerland
BASF Switzerland AG, Klybeckstrasse 141, CH-4057 Basel, Switzerland
Funding
BASF · National Centre of Competence in Research Robotics · Schweizerischer Nationalfonds zur F?rderung der Wissenschaftlichen Forschung
References (38)
Show source-provided references
1. 10.1557/mre.2018.1010.1557/mre.2018.10 ↗
2. 10.1002/aenm.20150120310.1002/aenm.201501203 ↗
3. 10.1002/aenm.20120053810.1002/aenm.201200538 ↗
4. 10.1039/c3ee41935e10.1039/c3ee41935e ↗
5. 10.1039/C4TA04912H10.1039/C4TA04912H ↗
6. 10.1021/cm101503y10.1021/cm101503y ↗
7. 10.1007/s00339-005-3358-210.1007/s00339-005-3358-2 ↗
8. 10.1103/PhysRevLett.101.03590110.1103/PhysRevLett.101.035901 ↗
9. 10.1002/Chem.20170148010.1002/Chem.201701480 ↗
10. 10.1039/c4ra00969j10.1039/c4ra00969j ↗
11. 10.1021/ja051653o10.1021/ja051653o ↗
12. 10.1021/acs.chemmater.7b0471010.1021/acs.chemmater.7b04710 ↗
13. 10.1103/PhysRevB.53.1633810.1103/PhysRevB.53.16338 ↗
14. 10.1021/acsnano.5b0463610.1021/acsnano.5b04636 ↗
15. 10.1039/C6CC05571K10.1039/C6CC05571K ↗
16. 10.1038/nphoton.2016.10810.1038/nphoton.2016.108 ↗
17. 10.1039/C6TC00893C10.1039/C6TC00893C ↗
18. 10.1039/C6TA08467B10.1039/C6TA08467B ↗
19. 10.1039/c3ce41304g10.1039/c3ce41304g ↗
20. 10.1002/Chem.20150100010.1002/Chem.201501000 ↗
21. 10.1002/adma.20150437710.1002/adma.201504377 ↗
22. 10.1021/acs.chemmater.7b0159310.1021/acs.chemmater.7b01593 ↗
23. 10.1039/C4TA00085D10.1039/C4TA00085D ↗
24. 10.1016/0925-8388(93)90069-Y10.1016/0925-8388(93)90069-Y ↗
25. 10.1088/2040-8978/14/10/10570110.1088/2040-8978/14/10/105701 ↗
26. 10.1107/S056773947600155110.1107/S0567739476001551 ↗
27. 10.1002/Chem.20080098710.1002/Chem.200800987 ↗
28. 10.1107/S010827019001334810.1107/S0108270190013348 ↗
29. 10.1007/BF0155125310.1007/BF01551253 ↗
30. 10.1021/cm402306q10.1021/cm402306q ↗
31. 10.1021/ja300064t10.1021/ja300064t ↗
32. 10.1038/nmat200910.1038/nmat2009 ↗
33. 10.1021/ja201628410.1021/ja2016284 ↗
34. 10.3406/bulmi.1980.738010.3406/bulmi.1980.7380 ↗
35. 10.1524/zkri.1994.209.8.68510.1524/zkri.1994.209.8.685 ↗
36. 10.1127/ejm/2016/0028-251310.1127/ejm/2016/0028-2513 ↗
37. 10.1016/j.jssc.2008.10.02510.1016/j.jssc.2008.10.025 ↗
38. 10.1002/pssb.1966015022410.1002/pssb.19660150224 ↗