Improving the Electrical Connection of n-Type Conjugated Polymers through Fluorine-Induced Robust Aggregation
Source abstract
Abstract
Naphthalene diimide (NDI)-based conjugated polymers with bithiophene or dithienylethene (TVT) units can form large crystal domains through NDI-driven self-assembly and are widely used in organic electronic devices as n-type materials. However, improving electron transport in these semiconducting polymers has been a significant challenge mainly due to poor electrical connections between the crystal domains. Formation of an interconnected network of small domains with short-range ordering and mixed orientations could be an effective way of increasing the electron mobility (μe) of polymeric materials. The present study demonstrates the feasibility of this approach using an NDI-based polymer composed of fluorinated TVT (FTVT) units. The FTVT unit enhances intermolecular interactions between the polymer chains, leading to robust aggregation. This aggregation was found to suppress NDI-driven self-assembly, resulting in interconnected small crystal domains with short-range ordering and good thermal stability at elevated temperatures. This microstructure provided transistor devices with improved μe by lowering energetic disorder as well as consistent electrical connectivity at different annealing temperatures.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Organic Electronics and Photovoltaics · Conducting polymers and applications · Perovskite Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Nam-Gu, Pohang, Gyeongbuk 37673, South Korea
Department of Electrical and Computer Engineering, University of Waterloo, 200 University Avenue West, Waterloo, ON N2L 3G1, Canada
UNIST Central Research Facilities & School of Natural Science, Ulsan National Institute of Science and Technology (UNIST), 50 UNIST-gil, Eonyang-eup, Ulsan 44919, South Korea
Funding
National Research Foundation of Korea
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