journal article·2011-02-08

Electron-Withdrawing Substituted Tetrathiafulvalenes as Ambipolar Semiconductors

Francisco Otón, Raphael Pfattner, Egon Pavlica, Yoann Olivier, Evelyn Moreno, Joaquim Puigdollers, Gvido Bratina, Jérôme Cornil, Xavier Fontrodona, Marta Mas-Torrent, Jaume Veciana, Concepció Rovira

Chemistry of Materials· Volume 23· Issue 3
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Abstract

The synthesis of four new TTF derivatives bearing phthalimides and fluorinated alkyl moieties as potential ambipolar semiconductors is described. The presence of such electron-withdrawing groups permits the stabilization of the energy of HOMO and LUMO orbitals. The solid-state structures of these novel molecules have been characterized by X-ray diffraction techniques. The potential of these materials as hole and electron conductors has been estimated under theoretical considerations by evaluating the position of the frontier energy levels as well as their charge carrier mobilities. Preparation of solution-processed single crystal organic field-effect transistors (OFETs) has resulted in hole mobilities of up to 0.33 cm 2 V −1 s −1 for compound 1 . On the other hand, electrical time of flight (EToF) measurements on single crystals of compound 3 demonstrated ambipolar transport, reaching very high mobility values around 2.0 cm 2 V −1 s −1 for both types of charges.
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Research context

OpenAlex topics: Organic and Molecular Conductors Research · Organic Electronics and Photovoltaics · Molecular Junctions and Nanostructures

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institut de Ciència de Materials de Barcelona (CSIC) and Networking Research Center on Bioengineering, Biomaterials and Nanomedicine (CIBER-BBN), Campus Universitari de Bellaterra, Cerdanyola E-08193, Barcelona, Spain

Laboratory for Organic Matter Physics, University of Nova Gorica, Vipavska 13, SI-5000 Nova Gorica, Slovenia

Laboratory for Chemistry of Novel Materials, University of Mons, Place du Parc 20, B-7000 Mons, Belgium

Department of Eng. Electronica and CrNE, Universitat Politecnica Catalunya, E-08034 Barcelona, Spain

Serveis Tecnics de Recerca, Universitat de Girona, Edifici Jaume Casademont (porta E), Pic de Peguera, 15 La Creueta, E-17003 Girona, Spain

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