DataVXChemistry of MaterialsPaper
journal article·2016-04-26

Impact of a Low Concentration of Dopants on the Distribution of Gap States in a Molecular Semiconductor

Xin Lin, Geoffrey E. Purdum, Yadong Zhang, Stephen Barlow, Seth R. Marder, Yueh-Lin Loo, Antoine Kahn

Chemistry of Materials· Volume 28· Issue 8
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Source abstract

Abstract

We investigate the distribution of valence and tail states in copper phthalocyanine (CuPc) upon the introduction of minute amounts of the p-dopant molybdenum tris[1,2-bis(trifluoromethyl)ethane-1,2-dithiolene] (Mo(tfd) 3 ), using a combination of electron spectroscopy and carrier transport measurements. Density of gap states, conductivity, and hole-hopping activation energy are measured. We observe the progressive filling (and deactivation) of the deepest tail states by charges introduced by the dopants, as well as significant broadening of the CuPc density of states. Simulations relate this broadening to the electrostatic and structural disorder induced by the dopant in the CuPc matrix.
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Research context

Electronic materials

OpenAlex topics: Organic Electronics and Photovoltaics · Organic and Molecular Conductors Research · Perovskite Materials and Applications

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Affiliations

Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, United States

Department of Chemical and Biological Engineering, Princeton University, Princeton, New Jersey 08544, United States

Center for Organic Photonics and Electronics and School of Chemistry and Biochemistry, Georgia Institute of Technology, Atlanta, Georgia 30332, United States

Funding

Air Force Office of Scientific Research · Office of Naval Research · National Institute of General Medical Sciences · Division of Materials Research

References (29)

Show source-provided references
1. 10.1063/1.12198210.1063/1.121982 ↗
2. 10.1063/1.364415910.1063/1.3644159 ↗
3. 10.1103/PhysRevB.86.03532010.1103/PhysRevB.86.035320 ↗
4. 10.1002/adfm.20140454910.1002/adfm.201404549 ↗
5. 10.1103/PhysRevB.81.08520110.1103/PhysRevB.81.085201 ↗
6. 10.1103/PhysRevLett.109.17660110.1103/PhysRevLett.109.176601 ↗
7. 10.1063/1.491862710.1063/1.4918627 ↗
8. 10.1063/1.477255110.1063/1.4772551 ↗
9. Belasco, J.Improving and Controlling Organic Field Effect Transistor Performance through Dual Solvent Processing and Molecular Doping. Ph.D. thesis,Princeton University, 2014.
10. 10.1021/ja904939g10.1021/ja904939g ↗
11. 10.1002/9780470132418.ch310.1002/9780470132418.ch3 ↗
12. 10.1016/S0009-2614(97)00481-810.1016/S0009-2614(97)00481-8 ↗
13. 10.1002/pssb.222175010210.1002/pssb.2221750102 ↗
14. 10.1002/pssb.20135033910.1002/pssb.201350339 ↗
15. 10.1103/PhysRevB.81.03532710.1103/PhysRevB.81.035327 ↗
16. 10.1016/j.orgel.2010.05.00710.1016/j.orgel.2010.05.007 ↗
17. 10.1103/PhysRevLett.110.26760210.1103/PhysRevLett.110.267602 ↗
18. 10.1103/PhysRevB.37.271410.1103/PhysRevB.37.2714 ↗
19. 10.1103/PhysRevB.71.04521410.1103/PhysRevB.71.045214 ↗
20. 10.1103/PhysRevB.78.03533410.1103/PhysRevB.78.035334 ↗
21. 10.1103/PhysRevLett.95.25640510.1103/PhysRevLett.95.256405 ↗
22. 10.1002/pssa.221132011010.1002/pssa.2211320110 ↗
23. 10.1016/0039-6028(94)90592-410.1016/0039-6028(94)90592-4 ↗
24. 10.1107/S010876810300942X10.1107/S010876810300942X ↗
25. 10.1039/C0CC02927K10.1039/C0CC02927K ↗
26. 10.1103/PhysRevB.84.04520310.1103/PhysRevB.84.045203 ↗
27. Silinsh E. · 198010.1007/978-3-642-81464-8 ↗
28. 10.1016/0301-0104(87)80041-110.1016/0301-0104(87)80041-1 ↗
29. 10.1039/C5MH00023H10.1039/C5MH00023H ↗